The invention relates to a high-integration-level and high-power-density module compatible with Econodual3 packaging. The high-integration-level and high-power-density module comprises a shell, two substrates arranged in the shell, a DC positive terminal, a DC negative terminal and an AC terminal. By overlapping the positive and negative terminals, the two connection regions on the substrate are adjacent and opposite in current, a proximity effect is generated to counteract a
magnetic field, and
stray inductance is reduced. And a wavy
water channel is designed in the bottom plate, so that the cooling liquid is easier to generate vortex, and the heat dissipation efficiency is greatly improved. A driving
signal loop is optimized to obtain low switching loss,
heat resistance is reduced through
copper paste
sintering on the back faces of the chips and the substrate and DTS
sintering connection on the front faces of the chips, parallel connection of 10 chips with the size of 6 mm * 7 mm and the total area of 420 mm < 2 > sic is achieved, a
current sensor is further integrated in a shell,
nanosecond-level
overcurrent protection can be achieved, and the heat dissipation and control requirements of high-current and high-power-density application scenes are met. The overall structure is symmetrically designed, the high-
voltage part is located on the outer side, the low-
voltage signal control and acquisition part is located on the inner side, the wiring design of a PCB is facilitated, and the size of the module can be compatible and matched with Econodual3 packaging.