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Method of manufacturing optical semiconductor device

A technology of an optical semiconductor device and a manufacturing method, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, radiation control devices, etc., can solve the problems of difficulty in forming an accumulation layer and the like

Pending Publication Date: 2018-10-23
HAMAMATSU PHOTONICS KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in a trench with a narrow and deep opening, it is difficult to form an accumulation layer to the deepest part of the trench by ion implantation

Method used

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  • Method of manufacturing optical semiconductor device
  • Method of manufacturing optical semiconductor device
  • Method of manufacturing optical semiconductor device

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Embodiment Construction

[0018] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same or corresponding part, and repeated description is abbreviate|omitted.

[0019] Such as figure 1 as well as figure 2 As shown, the optical semiconductor device 1 includes a semiconductor substrate 3 having a plurality of photoelectric conversion parts 2 . The plurality of photoelectric conversion portions 2 are formed by forming a plurality of semiconductor layers 4 in a matrix along the surface 3 a of the semiconductor substrate 3 . Each photoelectric conversion portion 2 constitutes a pixel. That is, the optical semiconductor device 1 is a solid-state imaging device. The semiconductor substrate 3 is, for example, a semiconductor substrate made of p-type silicon (first conductivity type semiconductor substrate). The semiconductor layer 4 is, for example, a semiconductor l...

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Abstract

The invention relates to a method of manufacturing an optical semiconductor device. A method of manufacturing an optical semiconductor device (1) includes preparing a semiconductor substrate having aplurality of photoelectric conversion parts, forming a trench in the semiconductor substrate to separate the plurality of photoelectric conversion parts from each other, forming a boron layer on an inner surface of the trench by a vapor phase growth method, and forming an accumulation layer in the semiconductor substrate along the inner surface of the trench by performing a thermal diffusion treatment on the boron layer.

Description

technical field [0001] The present invention relates to a method of manufacturing an optical semiconductor device. Background technique [0002] There is known an optical semiconductor device having a semiconductor substrate having a plurality of photoelectric conversion parts, and trenches (trench) are formed on the semiconductor substrate so as to separate the photoelectric conversion parts from each other (for example, refer to Japanese Patent Application Laid-Open No. 2003-86827 Bulletin). [0003] In the optical semiconductor device as described above, in order to keep the interval between the photoelectric conversion parts adjacent to each other narrow and suppress the occurrence of crosstalk between the photoelectric conversion parts adjacent to each other more reliably, there is a preferable A case where a narrow and deep trench is formed with an opening. However, when such a trench is formed, if a defect occurs on the semiconductor substrate along the inner surfac...

Claims

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Application Information

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IPC IPC(8): H01L27/144H01L21/82H01L21/761
CPCH01L21/761H01L21/82H01L27/1443H01L27/1446H01L21/2254H01L27/1463H01L27/14623H01L27/14685H01L21/2225H01L21/3065
Inventor 村松雅治宫﨑康人高桥弘孝
Owner HAMAMATSU PHOTONICS KK