Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon chip degumming technology

A silicon wafer degumming and silicon wafer technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of side chipping and loss of silicon wafer adhesive, and achieve the goal of ensuring no damage and ensuring the quality of degumming Effect

Active Publication Date: 2018-10-26
浙江海顺新能源有限公司
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon wafers need to be sprayed and rinsed multiple times in the degumming machine. The water used is mostly tap water or reclaimed water, and there is a certain requirement for the water temperature. If the water temperature is too low, the silicon wafers will easily stick after rinsing The problem of edge chipping on the rubber side caused serious losses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The present invention proposes a kind of silicon chip degumming process, comprises the steps:

[0020] S1: Place the cut silicon wafers quickly in a treatment tank filled with distilled water and clean the silicon surface at 30 degrees Celsius. The silicon wafers need to be cleaned 3-6 times to remove impurities on the surface of the silicon wafers ;

[0021] S2: Take out the silicon wafer treated in S1, dry its surface, then place it in the treatment tank again, and add deionized water to the treatment tank. Add the degumming solution in the pool, after the completion, mix and stir the deionized water at 45 degrees Celsius, and let the silicon wafer stand for 35 minutes after the deionized water and the degumming solution are mixed evenly;

[0022] S3: After standing still, put the silicon wafer under the spraying mechanism for spray washing treatment, and the water pressure is 0.6-0.7MPa, the spray washing time is 350, and the temperature of the spray water needs to ...

Embodiment 2

[0031] The present invention proposes a kind of silicon chip degumming process, comprises the steps:

[0032] S1: Place the cut silicon wafers quickly in a treatment tank filled with distilled water and clean the silicon surface at 33 degrees Celsius. The silicon wafers need to be cleaned 3-6 times to remove impurities on the surface of the silicon wafers ;

[0033] S2: Take out the silicon wafer treated in S1, dry its surface, then place it in the treatment tank again, and add deionized water to the treatment tank. Add the degumming solution in the pool, after the completion, mix and stir the deionized water at 48 degrees Celsius, and let the silicon wafer stand for 40 minutes after the deionized water and the degumming solution are mixed evenly;

[0034] S3: After standing still, put the silicon wafer under the spraying mechanism for spray washing treatment, and the water pressure is 0.6-0.7MPa, the spray washing time is 360s, and the temperature of the spray washing water ...

Embodiment 3

[0043] The present invention proposes a kind of silicon chip degumming process, comprises the steps:

[0044] S1: Quickly place the cut silicon wafers in a treatment tank filled with distilled water and clean the silicon surface at 37 degrees Celsius. The silicon wafers need to be cleaned 3-6 times to remove impurities on the surface of the silicon wafers ;

[0045] S2: Take out the silicon wafer treated in S1, dry its surface, then place it in the treatment tank again, and add deionized water to the treatment tank. Add the degumming solution in the pool, after the completion, mix and stir the deionized water under the condition of 52 degrees Celsius, after the deionized water and the degumming solution are evenly mixed, let the silicon wafer stand for 45 minutes;

[0046] S3: After standing still, put the silicon wafer under the spraying mechanism for spray washing treatment, and the water pressure is 0.6-0.7MPa, the spray washing time is 370s, and the temperature of the spr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon chip degumming technology. The technology comprises following steps of placing a silicon sheet in a processing pool; adding de-ionized water in the processing pool; adding degumming liquid in the processing pool; allowing the silicon sheet stand for 35-50 min; carrying out spray-washing processing; controlling the temperature of the spray-washing water to be 30-35DEG C; placing the processed silicon sheet into the processing pool again and adding degumming liquid; vibrating the silicon sheet under the condition of 50-60 DEG C; after the silicon sheet reacts with the degumming liquid for 3-6min, carrying out ultrasonic cleaning on the silicon sheet; placing the vibrated silicon sheet in an ultrasonic cleaner for immersion; placing the silicon sheet in a surface processing pool again; adding surface processing liquid in the surface processing pool; immersing the silicon sheet for 30-50 min in the environment of 35-45 DEG C; and carrying out spray-washing processing again. According to the invention, residue glue on the silicon sheet is completely cleaned, degumming quality is ensured and the surface of the silicon sheet can be protected against damage.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing, in particular to a silicon wafer degumming process. Background technique [0002] With the continuous development of the world economy, the demand for high-efficiency energy in modernization is increasing. Photovoltaic power generation, as one of the main energy sources for green energy and sustainable development of human beings, has been increasingly valued by countries all over the world and has been vigorously developed. Monocrystalline silicon wafers and polycrystalline silicon wafers, as the basic materials of solar cells for photovoltaic power generation, have extensive market demand. [0003] The silicon wafer cleaning process is the last process of producing silicon wafers. In this process, two types of cleaning equipment are mainly used. One is a solar silicon wafer degumming machine, which is mainly used to pre-process the silicon wafers after multi-wire cutting. Cle...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/02052H01L21/67057
Inventor 季丽王松华聂海洲余志兵
Owner 浙江海顺新能源有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com