Unlock instant, AI-driven research and patent intelligence for your innovation.

Material property detection method

A detection method and a technology of material characteristics, applied in the field of materials, can solve problems such as slow speed, long time-consuming, cumbersome and complicated methods, and achieve the effect of shortening time and saving costs

Active Publication Date: 2019-06-18
浙江荷清柔性电子技术有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The relationship between the strain and the energy band structure of semiconductor materials is particularly important. In related technologies, the way to determine the relationship between the strain and energy band structure of semiconductor materials is cumbersome and complicated, and the speed is slow and time-consuming.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Material property detection method
  • Material property detection method
  • Material property detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Various exemplary embodiments, features, and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numbers in the figures indicate functionally identical or similar elements. While various aspects of the embodiments are shown in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0042] The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as superior or better than other embodiments.

[0043] In addition, in order to better illustrate the present disclosure, numerous specific details are given in the following specific implementation manners. It will be understood by those skilled in the art that the present disclosure may be practiced without some of the specific details. In some instances, methods, means, componen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a material characteristic detection method. The method comprises steps as follows: a to-be-detected sample in preset shape and size is fixed on a prestretched flexible substrate, wherein the to-be-detected sample is made of a semiconductor material; the prestretched flexible substrate is released, so that the to-be-detected sample and the flexible substrate synchronously yield; the yielding to-be-detected sample is detected, and a detection result is determined; the relation between strain and an energy band structure of the semiconductor material is determined according to the detection result. By means of the provided material characteristic detection method, the relation between strain and the energy band structure of the semiconductor material can be simply andrapidly determined, time required for detection of material characteristics is shortened, and the cost required for detection of the material characteristics is saved.

Description

technical field [0001] The present disclosure relates to the field of materials, in particular to a method for detecting material properties. Background technique [0002] Semiconductor material (semiconductor material) is a class of electronic materials that have semiconductor properties and can be used to make semiconductor devices and integrated circuits. The conductivity of semiconductor materials is between conductors and insulators, and the resistivity is in the range of about 1MΩ·cm to 1GΩcm. [0003] Electronic devices such as mobile phones and computers used in daily life are inseparable from semiconductor materials. After several years of development, semiconductor materials have experienced the first, second and third generations. Among them, the first-generation semiconductors are represented by silicon (Si) germanium (Ge), which are mainly used in low-voltage, low-frequency, and medium-power transistors and photodetectors. The second-generation semiconductor ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N3/20G01N21/65G01N21/63
CPCG01N3/20G01N21/63G01N21/65G01N2203/0023
Inventor 冯雪王宙恒
Owner 浙江荷清柔性电子技术有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More