A wafer ion implantation method

A technology of ion implantation and wafer, applied in the direction of electrical components, conveyor objects, transportation and packaging, etc., can solve the problems of limitation, cost waste, and inability to improve the efficiency of etching liquid, so as to improve the clamping degree and reduce impurities Residual amount, effect of improving utilization efficiency

Active Publication Date: 2020-12-15
徐丹
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this technical solution can prolong the service life of the etching tank, the technical solution cannot improve the use efficiency of the etching solution, resulting in a waste of cost. At the same time, the solution cannot realize batch automatic production; this invention is limited

Method used

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  • A wafer ion implantation method
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Embodiment approach

[0046] As an embodiment of the present invention, the mobile module 2 includes a No. 1 slider 21, a fixed rod 22, a fixed plate 23, a sliding telescopic rod 24, a No. 1 mounting seat 25, a multi-stage air pressure rod 26, a mounting plate 27 and Connecting frame 28, No. 1 chute 29 is provided on the top plate inner wall of described reaction chamber 1, and described No. 1 slide block 21 is used for sliding in No. 1 chute 29; Fixedly connected with the No. 1 slider 21; the side surface of the fixed plate 23 is installed on the inner wall of the reaction chamber 1 through the sliding telescopic rod 24; the multi-stage air pressure rod 26 is fixedly installed on the fixed plate 23 through the No. 1 mounting seat 25 The bottom surface of the multi-stage air pressure rod 26 is fixedly connected to the connecting frame 28 through the mounting plate 27; the connecting frame 28 is used for fixedly connecting the grasping module 3. The movement of the No. 1 slider 21 in the No. 1 slide...

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Abstract

The invention belongs to the technical field of semiconductor processing, in particular to a wafer ion implantation method. The etching device used in the method comprises a moving module, a grabbingmodule, a first reaction tank, a second reaction tank, a third reaction tank, and a storage barrel, wherein the first reaction tank, second reaction tank, and third reaction tank are fixedly mounted on the surface of the wall bottom in the reaction chamber; the moving module is fixedly mounted on the top of the side surface of the inner wall in the reaction chamber; the gripping module is mountedon the moving module, the storage barrel is used for storing the wafer; the gripping module is used for grasping the storage barrel that is transported from the feeding gate to the reaction chamber; and the moving module cooperates with the gripping module to place the wafer in the storage barrel sequentially in the third reaction tank, the second reaction tank and the first reaction tank for etching. The invention is mainly used for etching the wafer, which is capable of improving the use efficiency of the etching liquid, and improving the etching efficiency by performing batch etching on thewafer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing, in particular to a wafer ion implantation method. Background technique [0002] In the semiconductor manufacturing process, whether the impurity tolerance of wafer ion implantation is uniform or not depends on the lithography process and cleaning process of the wafer. Among them, the cleaning process of the wafer plays a decisive role in the quality of the wafer. In semiconductor manufacturing technology, it is often Wet etching will be used mainly for leveling the wafer just after cutting, specifically through the chemical reaction between the reaction liquid and the etchant, so that the etchant is partially detached from the wafer surface, so that the wafer can be obtained the desired surface. However, mass production of wafers requires a large amount of etching solution, and if the utilization of the etching solution can be improved, the production cost can be increased. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/677H01L21/687
CPCH01L21/6708H01L21/67213H01L21/67781H01L21/6875
Inventor 陈涛王康
Owner 徐丹
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