ingap/ingaas/ge triple-junction solar cell with micro-nano anti-reflection structure and manufacturing method
A solar cell and inverse structure technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of restricting sufficient absorption of incident light, restricting photoelectric conversion efficiency, etc., to increase incident optical path, increase optical path and effective light absorption. , the effect of high anti-reflection characteristics
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Embodiment 1
[0067] 1)选择p型Ge衬底,抛光,清洗,在Ge表面淀积P原子,Ge衬底加热到700℃,形成n-Ge层。
[0068] 2)在Ge表面继续引入含In元素和Ga元素的气体与含P元素气体一起生长InGaP第一异质层;
[0069] 3)采用MOVPE的方法生长n-InGaAs缓冲层;
[0070] 4)采用纳米软压印法,在n-InGaAs缓冲层表面制备条栅结构;
[0071]5) The p-GaAs / n-GaAs tunnel junction, p-InGaP BSF layer, p-InGaAs base, n-InGaAs emitter and n-InGaP window are sequentially grown by MOVPE method;
[0072] 6) Prepare a grid structure on the surface of the n-InGaP window by using the nano soft imprint method;
[0073] 7) Using MOVPE method to grow p-AlGaAs / n-InGaP tunnel junction, p-AlInP BSF layer, p-InGaP base, n-InGaP emitter, n-AlInP window and GaAs layer sequentially;
[0074] 8) Prepare a composite micro-nano structure on the surface of GaAs by using nano-soft imprinting method;
[0075] The process flow for preparing the composite micro-nano structure is as follows:
[0076] 8a) The SU-8 gel was spun at 500rpm for 30s, then at 3000rpm for 5min; then baked at 65°C for 10min, then at 95°C for 20min; UV light curing for 30...
Embodiment 2
[0082] 1) Select a p-type Ge substrate, polish, clean, deposit P atoms on the Ge surface, and heat the Ge substrate to 750°C to form an n-Ge layer.
[0083] 2) Continue to introduce the gas containing In element and Ga element on the Ge surface to grow the first heterogeneous layer of InGaP together with the gas containing P element;
[0084] 3) growing n-InGaAs buffer layer by MOVPE method;
[0085] 4) Prepare a bar grid structure on the surface of the n-InGaAs buffer layer by using nano soft imprinting method;
[0086] 5) The p-GaAs / n-GaAs tunnel junction, p-InGaP BSF layer, p-InGaAs base, n-InGaAs emitter and n-InGaP window are sequentially grown by MOVPE method;
[0087] 6) Prepare a grid structure on the surface of the n-InGaP window by using the nano soft imprint method;
[0088] 7) Using MOVPE method to grow p-AlGaAs / n-InGaP tunnel junction, p-AlInP BSF layer, p-InGaP base, n-InGaP emitter, n-AlInP window and GaAs layer sequentially;
[0089] 8) Prepare a composite m...
Embodiment 3
[0097] 1) Select a p-type Ge substrate, polish, clean, deposit P atoms on the Ge surface, and heat the Ge substrate to 580°C to form an n-Ge layer.
[0098] 2) Continue to introduce the gas containing In element and Ga element on the Ge surface to grow the first heterogeneous layer of InGaP together with the gas containing P element;
[0099] 3) growing n-InGaAs buffer layer by MOVPE method;
[0100] 4) Prepare a bar grid structure on the surface of the n-InGaAs buffer layer by using nano soft imprinting method;
[0101] 5) The p-GaAs / n-GaAs tunnel junction, p-InGaP BSF layer, p-InGaAs base, n-InGaAs emitter and n-InGaP window are sequentially grown by MOVPE method;
[0102] 6) Prepare a grid structure on the surface of the n-InGaP window by using the nano soft imprint method;
[0103] 7) Using MOVPE method to grow p-AlGaAs / n-InGaP tunnel junction, p-AlInP BSF layer, p-InGaP base, n-InGaP emitter, n-AlInP window and GaAs layer sequentially;
[0104] 8) Prepare a composite m...
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