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Substrate processing apparatus

A substrate processing and equipment technology, which is applied in the field of substrate processing equipment, can solve the problems of reduced emission efficiency, increased emission time, and hindrance to the smooth discharge of exhaust gas, so as to achieve the effects of improving emission efficiency, shortening time, and shortening processing time

Active Publication Date: 2018-11-09
JUSUNG ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the prior art substrate processing apparatus, particles having a particle state are generated from the mixed gas in the process of discharging the mixed gas in which the source gas and the reaction gas are mixed, and for this reason, the generated particles become a hindrance to the smooth discharge of the exhaust gas. factors, leading to lower emission efficiency
In addition, in the prior art substrate processing equipment, the time it takes to discharge increases due to a decrease in discharge efficiency, and for this reason, the processing time of the thin film deposition process is extended

Method used

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Examples

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no. 1 example

[0048] refer to Figure 2 to Figure 4 , the substrate processing apparatus according to the first embodiment of the present invention may include a gas processing unit 200 for processing exhaust gas generated in the substrate processing unit 100 . Before describing the gas processing unit 200, the substrate processing unit 100 will be described in detail below with reference to the accompanying drawings.

[0049] The substrate processing unit 100 performs a thin film deposition process for depositing a thin film on a substrate W. Referring to FIG. For example, the substrate processing apparatus according to the present invention may be applied to a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film by using plasma.

[0050] The substrate processing unit 100 activates source and reaction gases using plasma and distributes the activated source and reaction gases to the substrate W, thereby performing a thin film deposition process on the substra...

no. 2 example

[0128] First, a substrate processing apparatus according to a second embodiment of the present invention will be described.

[0129] Figure 10 is a partially exploded perspective view of a chamber of a substrate processing apparatus according to a second embodiment of the present invention. Figure 11 is along Figure 10 The sectional view cut by the line "A-A", Figure 11 The structure of the injection unit of the substrate processing apparatus according to the second embodiment of the present invention is shown. Figure 12 yes Figure 10 top sectional view.

[0130] The processing of the substrate S may include forming a patterned thin film on the substrate S, such as an electrode or a dielectric layer including a metal oxide.

[0131] As shown, a substrate processing apparatus according to a second embodiment of the present invention may include a chamber 310 in which a space for inserting and processing a substrate S such as a silicon wafer or glass is provided. The c...

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Abstract

The present invention relates to a substrate processing apparatus for spraying a source gas and a reactive gas, the apparatus comprising: a first exhaust line for discharging a first exhaust gas containing more of the source gas than of the reactive gas; a second exhaust line for discharging a second exhaust gas containing more of the reactive gas than of the source gas; a capturing device provided on the first exhaust line; and a third exhaust line connected to an exhaust pump so as to discharge the first exhaust gas having passed through the capturing device and the second exhaust gas havingpassed through the second exhaust line.

Description

technical field [0001] The present invention relates to a substrate processing apparatus for depositing thin films on a substrate. Background technique [0002] Generally, thin film layers, thin film circuit patterns, or optical patterns should be formed on the surface of a substrate to manufacture solar cells, semiconductor devices, flat panel display devices, and the like. To this end, a semiconductor manufacturing process is performed, and examples of the semiconductor manufacturing process include: a thin film deposition process of depositing a thin film including a specific material on a substrate; an optical process of selectively exposing a part of the thin film by using a photosensitive material; removing and selectively exposing a portion The corresponding thin film is etched to form a pattern, etc. [0003] Semiconductor manufacturing processes are performed in substrate processing equipment designed based on an optimal environment for the corresponding process, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/3065H01J37/32H01L21/67H01L21/60
CPCH01J37/32834H01L21/67017H01L21/68764H01L21/68771H01J37/32449H01J37/32H01L21/3065H01J37/32174H01L21/67161H01L21/67309H01L21/68714
Inventor 金世英权秀泳刘真赫赵炳夏千珉镐黄喆周
Owner JUSUNG ENG