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Upper electrode assembly, reaction chamber and atomic layer deposition equipment

A technology of electrode components and reaction chambers, which is applied to electrical components, coatings, circuits, etc., can solve problems such as easy ignition, and achieve the effect of avoiding ignition and potential difference

Active Publication Date: 2020-03-31
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0006] The inlet port 400 of the capacitive plasma-enhanced ALD equipment is grounded, and a potential difference is easily generated between it and the shower plate 200. The potential difference will cause plasma to be generated between the two. A conductive film is deposited on the inner wall of the gas pipeline 300, and the deposition of the conductive film will cause an electrical short circuit between the air inlet port 400 and the spray plate 200, thus prone to sparking

Method used

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  • Upper electrode assembly, reaction chamber and atomic layer deposition equipment
  • Upper electrode assembly, reaction chamber and atomic layer deposition equipment
  • Upper electrode assembly, reaction chamber and atomic layer deposition equipment

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Embodiment Construction

[0045] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an upper electrode assembly, a reaction chamber and atomic layer deposition equipment. In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0046] An embodiment of the present disclosure provides an upper electrode assembly, which is used as an atomic layer deposition device, especially as a component of a capacitive plasma enhanced atomic laye...

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Abstract

The disclosure provides an upper electrode assembly, a reaction chamber, and atomic layer deposition equipment. The upper electrode assembly includes an air intake structure and an upper electrode plate. The upper electrode plate is provided with a main pipeline. The air intake structure is used to process The gas is introduced into the reaction chamber from the main pipeline, and the gas inlet structure includes: an insulating component placed on the upper electrode plate; an gas inlet component placed on the insulating component and provided with a first gas inlet pipeline , the first air intake pipeline communicates with the main pipeline through the insulating component, and the inner wall of the first air intake pipeline is electrically isolated from the inner wall of the main pipeline through the insulating component.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor manufacturing, and in particular to an upper electrode assembly, a reaction chamber and atomic layer deposition equipment. Background technique [0002] At present, the thin film deposition reaction process is widely used in semiconductor manufacturing. The thin film produced by the atomic layer deposition (Atomic Layer Deposition, ALD) process has significant advantages over other processes. [0003] The plasma-enhanced ALD (Plasma Enhanced ALD, PE-ALD) process in the ALD process can be used to prepare various thin films. Among them, the capacitive plasma-enhanced ALD passes two kinds of process gases that usually do not react together into its reaction chamber, and performs the ALD process by adjusting the radio frequency cycle. [0004] Existing capacitive plasma enhanced ALD equipment such as figure 1 As shown, it includes: a reaction chamber 100 and an upper electrode assembl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32532H01J37/32541Y02P70/50H01J37/3244C23C16/5096H01J2237/3321
Inventor 兰云峰史小平李春雷王勇飞王洪彪
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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