Method for studying mechanism of resistive random access memory

A resistive memory, mechanism technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., to achieve accurate and reliable test results

Active Publication Date: 2018-11-13
SHENZHEN UNIV
View PDF9 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is only suitable as an auxiliary proof for mechanistic studies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for studying mechanism of resistive random access memory
  • Method for studying mechanism of resistive random access memory
  • Method for studying mechanism of resistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042]The atomic force microscope is Fastscan atomic force microscope of Bruker Corporation. Bruker's SCM-PIT and conductive diamond atomic force probe were used respectively.

[0043] (1) Sample making

[0044] Silk protein is used as the active layer material. Dissolve the shredded silkworm cocoons with 0.02M sodium carbonate solution, boil them in boiling water for 60 minutes, and remove the sericin contained in the silkworm cocoons. The remaining fibers were rinsed with a large amount of deionized water, and dried overnight at room temperature to obtain a crude silk protein product. Then the crude silk protein product was completely dissolved with 9.3M lithium bromide solution, transferred to a dialysis bag (molecular weight cut-off 3000), and dialyzed with ultrapure water for 3 days (replace the ultrapure water every 12 hours). Finally, the dialysate was centrifuged (speed: 12000 rpm), and the supernatant was taken to obtain the silk protein solution. Using the obtain...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for studying a mechanism of a resistive random access memory, which comprises the steps of A, providing an active layer material used in the resistive random access memory, and fabricating the active layer material into a thin film on a substrate; B, adjusting an AFM to a contact mode, and performing carrier injection on the surface of th thin film by using a conductive atomic force probe so as to form a carrier injection region; C, switching the AFM to a surface potential measurement mode in situ, performing continuous scanning on a region containing the carrier injection region in a protective atmosphere to obtain a surface potential diagram of the scanning region, and evaluating the capacity of carriers in the active layer material according to the surface potential diagram. The injection, migration and retention ability of the carriers in the active material is evaluated based on in-situ carrier injection and continuous scanning, thus whether a resistance change is caused by the capture/release of charge by the active layer or not can be judged, and the detection result is accurate and reliable.

Description

technical field [0001] The invention relates to the field of resistive memory, in particular to a research method for the mechanism of resistive memory. Background technique [0002] The storage mechanism of resistive random access memory (RRAM) is: the active layer in the middle exhibits two stable resistances to store information under electrical excitation, and the high resistance and low resistance states respectively correspond to "0" in computer binary operations. "and 1". RRAM has a simple structure, and has the advantages of non-volatility, rewritable, and fast read and write speed. [0003] At present, the research on the carrier behavior of the active layer of the RRAM is mainly by fitting the obtained current-voltage curve and proposing the corresponding resistance transition mechanism in combination with relevant theories. Since this method is only fitting the data and deriving according to some possible theories, the conclusions drawn need to be studied. This...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L21/66
CPCH01L22/14H10N70/24H10N70/043H10N70/011
Inventor 吕子玉周晔韩素婷王俊杰
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap