A Minimalist Simulation Model of Floating Charge Controlled Memristor Circuit

Abstract

The invention discloses a very simple circuit simulation model of a floating charge-controlled memristor, which includes port a, port b, voltage-controlled resistor U R , resistance R, current control voltage source I U and voltage integrator A, voltage controlled resistor U R Including the voltage control terminal u c and the controlled resistance R u , voltage controlled resistor U R Internal controlled resistance R u The resistance value of the voltage control terminal u c controlled by the voltage value, the current controlled voltage source I U Including current control terminal i and voltage source output terminal u i , a current-controlled voltage source I U Internal voltage source output u i The voltage value of is controlled by the current value of the current control terminal i, and the voltage integrator A includes a voltage input terminal u i and voltage output u c . The electrical characteristics of the ports a and b of the simulation model of the floating charge-controlled memristor circuit are equivalent to the characteristics of the ports A and B of the memristor M, and only need to use the existing four components in the simulation software, which is a two-port model. The method further reduces the complexity and the number of components of the existing charge-controlled memristor circuit simulation model, and has the advantages of not requiring one end to be grounded, a flexible range of memristor value variation, and a wide operating voltage range.

Description

technical field [0001] The patent of the present invention relates to the field of new circuit element model construction, in particular to a minimalist circuit simulation model of a floating charge-controlled memristor. Background technique [0002] Memristor (memristor) is a basic circuit element that describes the relationship between magnetic flux and charge. It is recognized as the fourth basic circuit element after resistors, capacitors, and inductors. It is a nonlinear resistor with memory function. In 2008, the Hewlett-Packard (HP) laboratory successfully realized the physical realization of memristor for the first time, setting off an upsurge of memristor research worldwide. Memristors have been proven to have broad application prospects in fields such as computer science, neural networks, bioengineering, communication engineering, and nonlinear circuits. Because HP memristors are limited by nanotechnology and strict experimental conditions, they cannot go out of t...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an extremely simple simulation model of a floating load-controlled memristor circuit, which solves the problem that the existing load-controlled memristor circuit simulation model requires one end to be grounded, is not a two-port model, and the voltage of the two ports cannot exceed The power supply voltage of active devices in the model and the complex structure of the required components

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