Transparent quartz window, manufacturing method thereof and chemical vapor deposition technology

Abstract

The technical scheme of the invention discloses a transparent quartz window, a manufacturing method thereof and a chemical vapor deposition technology. The chemical vapor deposition technology comprises the following steps that a wafer is placed in a reaction chamber of the chemical vapor deposition technology, and a duel ultraviolet sweeping source is arranged above the reaction chamber; the transparent quartz window is arranged between the duel ultraviolet sweeping source and the wafer, and the surface, close to the duel ultraviolet sweeping source, of the transparent quartz window is provided with a plurality of inclined surfaces; reaction gas is introduced into the reaction chamber; and the wafer is irradiated by adopting the duel ultraviolet sweeping source, and ultraviolet light emitted by the duel ultraviolet sweeping source is irradiated to the surface of the wafer through the transparent quartz window. According to the technical scheme of the transparent quartz window, the manufacturing method thereof and the chemical vapor deposition technology, the interference problem of light can be reduced or eliminated, and therefore the film forming uniformity of the surface of thewafer can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a transparent quartz glass plate, a manufacturing method thereof, and a chemical vapor deposition process. Background technique [0002] At present, the ultraviolet irradiation process is often used in the semiconductor manufacturing industry. In order to improve efficiency, the ultraviolet irradiation process has been improved from the previous single irradiation light source to a dual light source (DSS, Dual Sweeping Source). Taking a chemical vapor deposition (CVD) process as an example, such as figure 1 As shown, the wafer 10 is placed on the heating device 21 in the vacuum reaction chamber 20, double ultraviolet light sources 30a and 30b are arranged above the vacuum reaction chamber 20, and a transparent quartz glass plate (quartz window) 40 is arranged on the double ultraviolet light source 30a, Between 30b and the wafer 10 , the reaction gas is intro...

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Problems solved by technology

[0004] The technical problem to be solved by the technical solution of the present invention is that when dual light sources irradiate the wafer surface, the light interference on the wafer surface will cause uneven illumination on the wafer surface and abnormal film formation uniformity

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