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Vertical Cavity Surface Emitting Laser

A technology of vertical cavity surface emission and lasers, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of reduced component characteristic yield, increased production cost, low operating efficiency, etc., and achieves improved size adjustment yield and process Effects of productivity improvement and manufacturing process simplification

Active Publication Date: 2020-12-29
RAYIR CO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Currently, although expensive commercial manufacturing process equipment is used to precisely control the formation of oxide openings, the fundamental problem has not been solved, only the production cost has increased
Also, even if such a precision device is used, there is a problem that an error of at least 1 μm or more occurs
[Refer to M.Grabherr, D.Wiedenmann, R.Jaeger, and R.King, "Fabrication and performance of tunable single-mode VCSELs emitting in the 750 to 1000nm range," Proc.SPIE 5737,120-128(2005)] Due to general The diameter of the oxide opening of the vertical cavity surface emitting laser device is about 5-10 μm, so a process error of 1 μm will significantly reduce the characteristic yield of the device
[0006] In addition, the oxidation treatment must be performed one by one for precise control, so there is a problem that the operation efficiency is extremely low

Method used

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  • Vertical Cavity Surface Emitting Laser
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Embodiment Construction

[0037] While the present invention can be modified in many ways and can have various forms, specific embodiments are shown in the drawings and described in detail herein. However, the present invention is not limited to a specific disclosed form, and it should be understood that all changes, equivalents, and substitutes belonging to the ideas and technical solutions of the present invention are included.

[0038] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. The term "and / or" includes a combination of multiple related listed items or any one of multiple related listed items.

[0039] It will be understo...

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Abstract

This embodiment discloses a vertical cavity surface emitting laser, which is characterized by comprising: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an oxide layer arranged on the on the active layer and including a first hole at its center; a second reflective layer disposed on the oxide layer and the first hole; and a first electrode disposed on the second reflective layer, Wherein, the second reflection layer includes a step portion, and the step portion is arranged on the first hole.

Description

technical field [0001] This embodiment relates to a vertical cavity surface emitting laser. Background technique [0002] A major advance in vertical cavity surface emitting lasers (VCSELs) currently in commercial use has been achieved by the introduction of oxide apertures. [0003] The oxide openings are formed by an oxidation process that occurs when the AlGaAs layer is exposed to high temperature N 2 and H 2 In the mixed gas atmosphere of O, H 2 O molecules diffuse in the AlGaAs layer and chemically react with the AlGaAs material, as a result, the AlGaAs material is converted into AlO x : Oxidation process of the As form, thereby forming oxide openings. This chemical oxidation process is strongly dependent on the Al content in the AlGaAs layer, the vapor content, the reaction chamber temperature and the crystallography and other processing conditions, so it is difficult to control the shape and size of the oxide opening in the lateral direction. Therefore, there is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183
CPCH01S5/183H01S5/18308H01S5/18344H01S2304/00
Inventor 崔元珍
Owner RAYIR CO