1D1R memory with single stacking structure, and preparation method thereof
A memory and heterogeneous structure technology, applied in the field of information storage, can solve the problems of increasing the complexity of the manufacturing process and high cost, and achieve the effects of increasing 3D integration density, suppressing cross-generation problems, and simplifying the manufacturing process
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no. 1 example
[0028] This embodiment provides a 1D1R memory with a single stack structure, the structure of which is as follows figure 1 As shown, including n-type Si substrate, p-type NiO film on n-type Si substrate, and Pt film on p-type NiO film, wherein the resistivity of the n-type Si substrate is about 0.01-0.05 Ω*cm, the resistivity of the p-type NiO film is about 10 4 -10 5 Ω*cm, thickness about 60nm, the thickness of the Pt thin film is about 150nm, and the shape is a circular array with a diameter of 400μm.
[0029] In this embodiment, the n-type Si substrate and the p-type NiO film form a pn heterostructure (1D), so that the formed device has rectification characteristics. At the same time, the n-type Si substrate has low resistivity and high conductivity It can be used as the bottom electrode, and the p-type NiO film can be used as a resistive layer (1R) due to its high resistivity and low conductivity to realize the high-low resistance switching of the device; the Pt film is ...
no. 2 example
[0036] This embodiment provides another 1D1R memory with a single stack structure, its structure is as follows Figure 5 As shown, including p-type Si substrate, n-type ZnO film on p-type Si substrate, and Al film on n-type ZnO film, wherein the resistivity of the p-type Si substrate is about 0.01-0.05 Ω*cm, the resistivity of the n-type ZnO film is about 10 4 -10 5 Ω*cm and a thickness of about 100nm, the thickness of the Al thin film is about 80nm.
[0037] In this embodiment, the p-type Si substrate and the n-type ZnO film form a pn heterostructure (1D), so that the formed device has rectification characteristics. At the same time, the p-type Si substrate has low resistivity and high conductivity Can be used as a bottom electrode, n-type ZnO film can be used as a resistive layer (1R) due to its high resistivity and low conductivity to realize high-low resistance switching of devices; Al film is used as a metal film top electrode, and its work function is the same as that ...
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