Film thickness measurement method and film thickness measurement device
A technology of thickness measurement and film layer, which is applied in the direction of measuring device, image analysis, image enhancement, etc., can solve the problem of inaccurate measurement of film thickness, save labor costs, improve accuracy and reliability, and simplify measurement steps Effect
Active Publication Date: 2020-07-24
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0005] The invention provides a film thickness measurement method and a film thickness measurement device, which are used to solve the problem that the film thickness cannot be accurately measured in the existing 3D NAND memory, and at the same time simplify the operation steps of the film thickness measurement
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[0060] The specific embodiments of the film thickness measurement method and the film thickness measurement device provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0061] A three-dimensional memory, especially a 3D NAND memory, includes a stacked structure formed by alternately stacking gates and insulating layers, and the stacked structure includes a step region and a core region. The step area is located at the end of the stack structure, and the area except the step area in the stack structure is a core area. The core region is usually provided with a plurality of deep channel holes penetrating the stack structure, and the channel holes are usually filled with multiple layers of a channel layer, a tunnel layer, a charge trap layer, and a barrier layer. Accurate detection of the thickness of each layer is the key to ensuring the performance of 3D NAND memory. At present, in order to measure the thickness of each...
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The invention provides a film thickness measuring method and a film thickness measuring device. The film thickness measuring method comprises the following steps of providing one image, wherein the image is a sectional view of more than two films which are coaxially nested; selecting the film section of a film to be measured, wherein the film section of the film to be measured includes a first boundary and a second boundary which are opposite; using a first edge detection algorithm to acquire the first contour of the first boundary; using a second edge detection algorithm to acquire the secondcontour of the second boundary; calculating the vertical distances from a plurality of pixel points in the first contour to the second contour and acquiring the thickness of a first film. In the invention, the measurement steps of the film thickness are simplified, manpower cost is saved, and the precision and the reliability of film thickness measurement are increased.
Description
Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a film thickness measurement method and a film thickness measurement device. Background technique [0002] With the development of technology, the semiconductor industry continues to seek new ways of production, so that each memory die in the memory device has a larger number of memory cells. In non-volatile memory, such as NAND memory, one way to increase memory density is through the use of vertical memory arrays, that is, 3D NAND (three-dimensional NAND) memory; with the increasing integration, 3D NAND memory has changed from From 32 floors to 64 floors, or even higher. [0003] In general, a 3D NAND memory includes a stack structure formed by alternately stacking gates and insulating layers, and the stack structure includes a step region and a core region. The step area is located at the end of the stack structure, and the contact is electrically connected to the ga...
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IPC IPC(8): G01B15/02G06T7/00G06T7/13G06T7/62
CPCG01B15/02G06T7/0004G06T7/13G06T7/62G06T2207/10004G06T2207/30148
Inventor 刘公才
Owner YANGTZE MEMORY TECH CO LTD