Method for determining stress of sapphire single crystal material by using X-ray diffraction method

A single crystal material, sapphire technology, applied in material analysis using radiation diffraction, material analysis using wave/particle radiation, material analysis, etc., can solve the problems of poor measurement accuracy and accuracy

Inactive Publication Date: 2018-12-14
HARBIN INST OF TECH
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  • Summary
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Problems solved by technology

[0005] The present invention is to solve the problem of measurement accuracy and poor accuracy of the residual stress measurement method of the existing sapphire single crystal material, and provides a method for measuring the stress of the sapphire single crystal material by X-ray diffraction method

Method used

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  • Method for determining stress of sapphire single crystal material by using X-ray diffraction method
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  • Method for determining stress of sapphire single crystal material by using X-ray diffraction method

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specific Embodiment approach 1

[0048] Specific embodiment one: the present embodiment measures the method for sapphire single crystal material stress with X-ray diffraction method, comprises the following steps:

[0049] Step 1. Select the sapphire crystal rod material, and use a diamond tool to cut the sapphire crystal rod into a sapphire single crystal substrate, and polish the sapphire single crystal substrate;

[0050] Step 2. Measure the azimuth and ψ:

[0051] For the sapphire single crystal substrate sample after step 1 polishing, the pole figure is measured by X-ray diffraction method, and the spatial azimuth angle is further obtained through the pole figure and ψ; where is the angle rotated by the pole around the normal of the characteristic surface, and ψ is the inclination angle of the diffraction vector relative to the normal of the sample surface;

[0052] Step 3, establish a relational coordinate system and perform single crystal orientation, give the sample coordinate system S, the labo...

specific Embodiment approach 2

[0077] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 1, the sapphire ingot material obtained by the cold-heart shouldering micro-pulling method is selected. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0078] Specific embodiment three: the difference between this embodiment and specific embodiment one is: in step one, the specific method of polishing the sapphire single crystal substrate is:

[0079] The flaky single crystal sample is polished until the surface roughness of the sapphire single crystal sample is Ra0.2-0.4nm to obtain a polished sapphire single crystal sheet. Others are the same as in the first embodiment.

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Abstract

The invention discloses a method for determining the stress of a sapphire single crystal material by using an X-ray diffraction method, relates to a method for determining the stress of a sapphire single crystal material and aims at solving the problem of poor measurement precision and accuracy of an existing residual stress measurement method for the sapphire single crystal material. The method comprises the steps of (1) selecting a sapphire crystal rod material, cutting the sapphire crystal rod material into a sapphire single crystal substrate and carrying out polishing treatment on the sapphire single crystal substrate; (2) determining azimuth angles phi and psi; (3) establishing a relationship coordinate system, carrying out single crystal orientation and giving a sample coordinate system S, a laboratory reference coordinate system L and a crystal coordinate system X, wherein the origins of the three coordinate systems overlap; (4) obtaining a stress-strain relationship of a singlecrystal hexagonal system material; and (5) determining the stress of the sapphire single crystal material, thereby determining sigma11, sigma12 and sigma22. The method has relatively high measurementprecision and reliability and can be popularized into a method for determining the single crystal stress of a hexagonal system sample. The method is used for determining the stress of a hexagonal crystal material.

Description

technical field [0001] The invention relates to a method for measuring the stress of a sapphire single crystal material. Background technique [0002] Sapphire single crystal is widely used in many fields of national defense and civil industry, science and technology and electronic technology due to its excellent physical, chemical, optical and mechanical properties. Especially in critical applications such as fairings and optical windows, high-quality, low-damage sapphire crystal elements are required in large quantities. [0003] However, residual stress will inevitably be introduced during the production, processing and use of sapphire. Residual stress is the self-equilibrium internal stress that remains in the object after eliminating the effects of external force or uneven temperature field. It is one of the important indicators to measure the quality of components, and has a very important impact on the fatigue strength, brittle fracture resistance, stress corrosion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/20G01N23/2005
CPCG01N23/20G01N23/2005
Inventor 张宇民周玉锋邓亚曾秋云
Owner HARBIN INST OF TECH
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