Semiconductor structure and forming method thereof
A technology of semiconductor and wet etching, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as precise control of the threshold voltage of difficult semiconductor structures
Active Publication Date: 2018-12-18
SEMICON MFG INT (SHANGHAI) CORP +1
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- Application Information
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Problems solved by technology
[0004] However, the existing methods for forming semiconductor structures are not easy to precisely control the threshold voltage of semiconductor structures
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Embodiment Construction
[0032] There are many problems in the formation method of the semiconductor structure, for example: the formation method is not easy to precisely control the threshold voltage of the semiconductor structure.
[0033] In combination with a method for forming a semiconductor structure, the reason why the formation method is not easy to precisely control the threshold voltage of the semiconductor structure is analyzed:
[0034] Figure 1 to Figure 3 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.
[0035] Please refer to figure 1 1. A substrate 100 is provided. The substrate 100 has a dielectric layer 102 thereon, the dielectric layer 102 has openings 110 therein, and the substrate 100 on both sides of the opening 110 has source-drain doped regions 101 .
[0036] continue to refer figure 1 , forming a gate dielectric layer 111 on the bottom and sidewall surfaces of the opening 110 ; forming a cover layer 112 on the surface ...
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Abstract
The invention provides a semiconductor structure and a forming method thereof, wherein, the forming method comprises the following steps: providing a substrate; Forming a gate dielectric layer on thesubstrate; Forming a cladding layer on the surface of the gate dielectric layer, wherein the covering layer is a metal or a metal compound; Forming a sacrificial layer on the covering layer, the sacrificial layer being a metal or a metal compound; After forming the sacrificial layer, annealing the covering layer; Removing the sacrificial layer after the annealing process; After removing the sacrificial layer, forming a work function layer on the covering layer; and forming A grid electrode on the work function layer. During the annealing process, the barrier layer and the covering layer do noteasily form by-products affecting the work function of the covering layer on the contact surface of the sacrificial layer and the covering layer, thereby not easily affecting the threshold voltage ofthe formed semiconductor structure. Thus, the forming method can improve the performance of the formed semiconductor structure.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous progress of semiconductor technology, the integration level of semiconductor devices has been continuously improved, which requires that more transistors can be formed on a chip. [0003] Threshold voltage is an important parameter of transistors, which has a great influence on the performance of transistors. Transistors with different functions often have different requirements on threshold voltages. During the process of forming different transistors, the threshold voltages of different transistors need to be adjusted. In order to adjust the threshold voltages of different transistors, a work function layer is often formed on the gate dielectric layer of the transistors. Transistors can have different threshold voltages by selecting the thickness and m...
Claims
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IPC IPC(8): H01L29/06H01L29/10H01L21/336H01L29/78
CPCH01L29/0649H01L29/10H01L29/66409H01L29/78
Inventor 张丽杰
Owner SEMICON MFG INT (SHANGHAI) CORP