Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for improving exposure accuracy

A technology of exposure accuracy and exposure point, which is used in photolithography process exposure devices, microlithography exposure equipment, optics, etc. Pixel light leakage and other problems, to achieve the effect of improving product yield and exposure accuracy

Active Publication Date: 2019-01-04
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the deviation of the exposure position is abnormal, the position of the pattern in the next process will not match, which may cause the transistor in the substrate to fail to conduct or the red, green and blue pixels in the color filter substrate to leak light.
As a result, there may be deviations in the alignment between the substrate and the color filter substrate during box formation, which will affect the product yield rate during box formation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for improving exposure accuracy
  • Method and apparatus for improving exposure accuracy
  • Method and apparatus for improving exposure accuracy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0030] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the conven...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method and apparatus for improving exposure accuracy are disclosed. After the exposure region is formed on the substrate, the exposure points in the exposure region are extracted to obtain a set ofexposure points, the exposure offset values corresponding to each exposure point in the set of exposure points are detected to obtain a set of exposure offset values, and the exposure points corresponding to each exposure offset value are corrected based on the set of exposure offset values. In the embodiment of the present application, the exposure point is corrected based on the offset value ofthe exposure point, so that the exposure precision can be effectively improved, thereby improving the yield of the product.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a method and device for improving exposure accuracy. Background technique [0002] In the photolithography process of the liquid crystal display panel manufacturing process, an exposure machine is required, and the exposure process is realized by combining the glass substrate coated with the photoresist film and the photomask through the exposure machine. In this step, the positional accuracy of exposure determines the alignment and manufacturing accuracy of the glass substrate in the subsequent manufacturing process. If the deviation of the exposure position is abnormal, the position of the pattern in the next process will not match, which may lead to the failure of the transistor in the substrate or the light leakage of the red, green and blue pixels in the color filter substrate. As a result, there may be deviations in the alignment between the substrate and the co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70425G03F7/70433G03F7/70591G03F7/70616G03F7/7085G02F1/1303G03F7/70525G03F9/7046
Inventor 桂宇畅
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD