A kind of power device and its preparation method

Abstract

A power device include a chip, the chip includes an active region and an isolation region on both sides of the active region, the isolation region extending from an upper surface of the chip to a first metal layer within the chip, the isolation region extending from a lower surface of the chip to a second metal layer within the chip, extending from a side of the chip to a dielectric layer within the chip between the first metal layer and the second metal layer, The dielectric layer includes a third metal layer formed within the dielectric layer, and a fourth metal layer formed on an outer surface of the isolation region connecting the first metal layer, the second metal layer, and the third metal layer. In addition, the invention also relates to a preparation method of a high-reliability packaged power device. The power device of the invention can further improve the heat dissipation efficiency without increasing the chip area.

Description

technical field [0001] The invention relates to the technical field of semiconductor chips, in particular to a power device and a manufacturing method thereof. Background technique [0002] Power devices are developing in the direction of modularization and intelligence. The emergence of large-scale and ultra-large-scale integrated circuits has led to higher and higher integration of power devices, and the assembly number and assembly density of various chips on the substrate are also increasing. To reduce the volume of power electronic modules and further increase the power density, these will cause power devices to withstand more and more high temperatures or temperature drift during use. High temperatures have a great impact on the reliability and life of power devices, which in turn leads to product expire prematurely. Contents of the invention [0003] In order to overcome the deficiencies of the prior art, the object of the present invention is to provide a power de...

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Problems solved by technology

[0002] Power devices are developing in the direction of modularization and intelligence. The emergence of large-scale and ultra-large-scale integrated circuits has led to higher and higher integration of power devices, and the assembly number and assembly density of various chips on the substrate are also increasing. To reduce the volume of power electronic modules and further increase the power density, these will cause power devices to withstand more and more high temperatures or temperature drift during use. High temperatures have a great impact on the reliability and life of power devices, which in turn leads to product premature failure

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