Preparation method of MoS2/MoO2 heterojunction

A heterojunction and quartz tube technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of easy introduction of impurities, poor repeatability, etc., and achieve the effect of simple reaction process

Inactive Publication Date: 2019-01-15
TAIYUAN UNIV OF TECH
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problems that the existing heterojunction preparation method is easy to i

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of MoS2/MoO2 heterojunction
  • Preparation method of MoS2/MoO2 heterojunction
  • Preparation method of MoS2/MoO2 heterojunction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In SiO 2 / Si substrate prepared MoS 2 / MoO 2 Heterojunction.

[0033] (1) In the quartz tube furnace, the ceramic boat containing S powder was placed downstream of the gas path, at a position 17 cm away from the center of the tube furnace, filled with MoO 3 The ceramic boat of the powder is placed upstream of the gas path, 10cm away from the center of the tube furnace, and the SiO 2 / Si substrate is placed in the center of the tube furnace temperature zone, where S powder and MoO 3 The masses of the powders are 200mg and 6mg respectively;

[0034] (2) Use a mechanical pump to pump out the air in the quartz tube, and then fill it with argon until the pressure in the quartz tube returns to atmospheric pressure, then use a mechanical pump to pump out the gas in the quartz tube again, and fill it with argon again to make the quartz tube The pressure in the tube returns to atmospheric pressure;

[0035] (3) Adjust the flow rate of argon to 20 sccm, and heat the tube fu...

Embodiment 2

[0038] The experimental procedure is exactly the same as that of Example 1, except that the argon gas flow rate of 30 sccm remains unchanged throughout the growth process.

[0039] When the carrier gas flow rate increased to 30 sccm, the concentration of S vapor in the temperature zone increased, and rhombohedral grains were formed on the surface of the substrate after the growth, and the Raman test results at different positions showed that these grains were partly MoO 2 , partly MoS2 / MoO 2 heterojunction, such as Figure 5-7 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a preparation method of an MoS2/MoO2 heterojunction, and belongs to the technical field of nano-optoelectronic material preparation. The problems that existing heterojunctionpreparation methods are prone to introducing impurities and poor in repeatability can be solved. A solid S and MoO3 are used as a precursor, and the MoS2/MoO2 heterojunction is synthesized on a targetsubstrate after a chemical gas-phase reaction, wherein the concentration of S vapor in a tubular furnace temperature area can be adjusted through the magnitude of carrier gas flow. Compared with a positioning mechanical transfer method, according to the preparation method of the MoS2/MoO2 heterojunction, the large-area MoS2/MoO2 heterojunction can be prepared stably and efficiently, and the preparation method can extend to preparation of a Van der Waals heterojunction based on two-dimensional transition metal chalcogenide. The obtained MoS2/MoO2 heterojunction can be used for scientific research and making nano-optoelectronic devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of nano-optoelectronic materials, in particular to a kind of MoS 2 / MoO 2 Methods for the preparation of heterojunctions. Background technique [0002] Due to their unique physical properties, the two-dimensional transition metal chalcogenides MX 2 (M=Mo, W; X=S, Se) has attracted widespread attention, and has shown great potential application value in the fields of optoelectronics and energy, but it is well known that the performance of a single material is difficult to fully satisfy all fields. requirements. Therefore, designing van der Waals heterojunctions based on two-dimensional transition metal dichalcogenides has become a research hotspot today. This is due to the fact that the interaction between two different materials can give the heterojunction novel physical properties different from those of a single material. For example, the latest research results show that in SiO 2 / MoS...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/30
CPCC23C16/30
Inventor 陈波韩燕薛林李向前
Owner TAIYUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap