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Semiconductor transversely varying doping terminal structure and preparation method thereof

A terminal structure and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of surface charge sensitivity, poor withstand voltage reliability, etc., and achieve the effect of increasing process costs and shielding adverse effects

Inactive Publication Date: 2019-01-15
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, JTE and VLD terminals can use a smaller size to achieve high withstand voltage, but these two types of terminals are sensitive to surface charges and have poor withstand voltage reliability

Method used

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  • Semiconductor transversely varying doping terminal structure and preparation method thereof
  • Semiconductor transversely varying doping terminal structure and preparation method thereof
  • Semiconductor transversely varying doping terminal structure and preparation method thereof

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Embodiment Construction

[0039] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.

[0040] The terminology used in the present invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used herein and in the appended claims, the singular forms "a", "the", and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that the term "and / or" as used herein refers to and includes any and all possible combinations of one or more of the associated listed items.

[0041] Some embodiments of the present invention will be described in detail below with referenc...

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Abstract

The invention discloses a semiconductor transverse varying doping terminal structure and a preparation method thereof. The preparation method of the semiconductor transverse varying doping terminal structure comprises the following steps: providing a semiconductor substrate; Performing ring photolithography on the semiconductor substrate; P-type ions are implanted through the ring, and then the transversely doped P-type withstand voltage region is formed after being pushed through the junction. Forming a polycrystalline field plate by precipitation on the semiconductor substrate; Forming a dielectric layer precipitation after photolithography and etching on the polycrystalline field plate; A metal field plate is for by precipitation on that dielectric layer. A transverse variable doping terminal structure of the semiconductor and a preparation method thereof add a polycrystalline field plate and a metal field plate on the basis of the transverse variable doping terminal structure, At that same time, the transversely dope terminal structure is compatible with the semiconductor device process and does not increase the additional process cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a semiconductor lateral variable doping terminal structure and a preparation method thereof. Background technique [0002] Power semiconductor devices are essential core devices for realizing power conversion and control. With the establishment and promotion of the concept of energy saving, emission reduction and green environmental protection, the importance of power semiconductors is increasing day by day, and the application prospects are getting wider and wider. The country has made promoting the industrial development of new power electronic chips and devices an important strategic goal during the 12th Five-Year Plan period. [0003] In the field of power electronics, power semiconductor devices are key components, and their characteristics play a vital role in the realization and improvement of system performance. One of the most important characteristics of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/40
CPCH01L29/0615H01L29/0684H01L29/404
Inventor 张新李巍
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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