A single-line carrier photoelectric mixer and an electromagnetic wave phased array antenna receiving front end

A single-row carrier and mixer technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large photoelectric mixing loss, low frequency, low device speed, etc., and achieve the effect of large bandwidth loss
CN109273552AActive Publication Date: 2019-01-25SOUTHEAST UNIV

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2019-01-25

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Abstract

The invention discloses a single-line carrier photoelectric mixer and a phased array antenna receiving front end, A substrate, a P-type heavily dope lower contact layer, a P-type heavily doped electron blocking layer, a light absorption layer, a collecting layer, an N-type heavily doped intermediate conductive layer, a Schottky contact layer, an N-type doped upper barrier layer and an N-type heavily doped upper contact layer are sequentially superposed on that single-row carrier photoelectric mixer from bottom to top. Further, the light absorbing layer is gradient doped. A moderately doped InPcliff layer is also arranged between the collecting layer and the light absorbing layer. By designing the material and the device structure, the invention has the advantages of high speed, large bandwidth, low photoelectric mixing frequency conversion loss, large bandwidth and low noise compared with the traditional single-row carrier photodiode, and is larger than that of the phototransistor.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor photoelectric devices, in particular to a unidirectional carrier photoelectric mixer and an electromagnetic wave phased array antenna receiving front end. Background technique

[0002] A photodetector is a device that converts optical signals into electrical signals. When the photon energy of the incident optical signal is greater than the band gap of the light-absorbing layer material, photogenerated carriers will be generated in the photodetector. At this time, if an AC signal is superimposed on the bias voltage of the photodetector to modulate the photogenerated carriers, the frequency mixing of the input optical signal and the AC signal superimposed on the bias voltage of the photodetector can be realized. The photoelectric mixing in a large number of literatures is to use the nonlinear relationship between the output response of the photodetector and the bias voltage and the incident li...

Claims

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