Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transient voltage suppressor and manufacturing method thereof

A technology of transient voltage suppression and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of long production cycle and high production cost, and achieve the effect of fewer times, lower application costs, and lower costs.

Active Publication Date: 2019-02-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA ZHONGSHAN INST
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, in the production process of conventional transient voltage suppressors, at least four photolithography operations are required to complete, and the production cost is high and the production cycle is long.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The invention mainly provides a solution to the problems of high production cost and long production cycle in the production process of conventional transient voltage suppressors.

[0029] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described implementation Examples are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "hor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a transient voltage suppressor and a manufacturing method thereof. The method comprises the steps of: etching a substrate of a first conductive type, and forming a forward groove located in the substrate; filling a dielectric layer in the forward groove; etching the substrate from the side surface of the substrate, and forming a lateral groove extended to the dielectric layer in the substrate; growing a second conductive type of epitaxial layer in the lateral groove; respectively covering a first metal layer and a second metal layer at the upper surface and thelower surface of the substrate to form a transient voltage suppressor. The transient voltage suppressor prepared through adoption of the manufacturing method provided by the invention has a dual protection function, the method is employed to manufacture the transient voltage suppressor with short production cycle at low cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] Electro-Static Discharge (ESD) and other random transient voltages in the form of voltage surges usually exist in various electronic devices. Voltage surges ranging from electrostatic discharge to lightning can induce transient current spikes. As semiconductor devices are increasingly miniaturized, high-density, and multi-functional, electronic devices are increasingly vulnerable to voltage surges, which can even cause fatal injuries. [0003] A transient voltage suppressor (TransientVoltage Suppressor, TVS), as a diode-based protection device, is usually used to protect sensitive circuits from various forms of transient high voltage impacts. Based on different applications, the transient voltage suppressor can protect the circuit by changing the surge discharge path and its ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L29/861H01L29/06
CPCH01L29/0657H01L29/66136H01L29/8613H01L29/8618
Inventor 不公告发明人
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA ZHONGSHAN INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products