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A room temperature flexible cu 2 Preparation method of x bulk thermoelectric material

A technology of thermoelectric materials and bulk materials, applied in the direction of binary selenium/tellurium compounds, metal selenide/telluride, copper sulfide, etc., can solve the problems of low density of X blocks, weakened material strength, and non-dense materials , to achieve high densification, excellent thermoelectric performance, and simple preparation process

Active Publication Date: 2022-01-11
WUHAN UNIV OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

On the surface, all operations are carried out at room temperature. However, the chemical reaction induced by mechanical force will still release heat, which will cause the material to heat up to a certain extent, resulting in the appearance of pores in the material, and finally Cu 2 Se and Cu 2 S density is 96% and 98.3% respectively (patent CN105272258A)
The material is not dense, especially the pore defect, which will greatly weaken the strength of the material, which is very unfavorable for the practical application of the material
Therefore, it is necessary to develop a densification technology that is simple, energy-saving, green and environmentally friendly, and can precisely control the composition to solve the problem of Cu 2 The low density of the X block makes it flexible at room temperature, which is extremely important

Method used

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  • A room temperature flexible cu <sub>2</sub> Preparation method of x bulk thermoelectric material
  • A room temperature flexible cu <sub>2</sub> Preparation method of x bulk thermoelectric material
  • A room temperature flexible cu <sub>2</sub> Preparation method of x bulk thermoelectric material

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Embodiment 1

[0053] A room temperature flexible Cu 2 The preparation method of Se bulk thermoelectric material, concrete steps comprise as follows:

[0054] 1) Using Cu powder and Se powder as raw materials, weigh Cu powder and Se powder according to the stoichiometric ratio of 2:1, totaling 50g;

[0055] 2) Mix the weighed raw materials evenly in an agate mortar, then put them into a steel mould, adopt a pressure of 6 MPa on a tablet press and keep the pressure for 5 minutes to make a Φ12mm ingot;

[0056] 3) Vacuum-seal the obtained ingot in a quartz glass tube, then move the bottom end of the glass tube to a gas flame to ignite, and immediately remove the flame after the self-propagating reaction is triggered, and then cool naturally to obtain Cu 2 Se single-phase compound (XRD results see figure 1 );

[0057] 4) with step 3) the prepared Cu 2 Se single-phase compound powder into 30×15mm 2 In the steel mold, hold the pressure at 550MPa for 3 minutes, and then prepare Cu by prelimin...

Embodiment 2

[0064] A room temperature flexible Cu 2 The preparation method of S bulk thermoelectric material, concrete steps comprise as follows:

[0065] 1) Using Cu flakes and S granules as raw materials, weigh the Cu flakes and S granules according to the stoichiometric ratio of 2:1, totaling 15g;

[0066] 2) Vacuum-seal the weighed raw materials into a quartz glass tube, then place it in a melting furnace at 1100°C for 24 hours, then cool with the furnace, grind the obtained ingot into powder, and test the XRD results as follows: Figure 7 shown;

[0067] 3) the Cu prepared in step 2) 2 S single-phase compound powder into 30×15mm 2 In the steel mold, hold the pressure at 480MPa for 5 minutes, and then prepare Cu by preliminary cold pressing at room temperature. 2 S block thermoelectric material (thickness is 3.1mm);

[0068] 4) For the obtained Cu 2 The S block thermoelectric material is processed by MSK-2300A rolling mill. The specific parameters include: setting the distance b...

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Abstract

The present invention develops for the first time a Cu with room temperature flexibility 2 The preparation method of X bulk thermoelectric material, it uses Cu 2 X compound powder is used as raw material (wherein X = Se or S), followed by cold pressing and rolling to obtain high-density Cu 2 X Bulk thermoelectric materials. The present invention adopts the means of cold pressing and densification, which can effectively improve the problems that S and Se elements are easily volatilized in the existing thermal processing molding process, thus affecting the product composition and densification effect. The preparation process involved is simple, the reaction conditions are mild, and the obtained Cu 2 X bulk thermoelectric materials have a high degree of densification, and can exhibit good flexibility and excellent thermoelectric performance at room temperature, and have important application prospects in the field of flexible electronics.

Description

technical field [0001] The invention belongs to the field of material preparation science, in particular to a Cu with room temperature flexibility 2 X. Fabrication method of bulk thermoelectric materials. Background technique [0002] Compared with traditional electronic devices, flexible electronic devices have completely different mechanical properties, including foldability, stretchability, bendability, etc., which have caused major changes in many fields such as electronic devices, optoelectronic devices, biomedicine, and energy storage. . Because the deformation stress of metals, alloys and organic materials can reach 5%-100%, and the hard and brittle inorganic semiconductor materials are often only 0.1%-0.2% due to the intrinsic characteristics of the crystal structure, and rarely exceed 1%. Therefore, the current flexible electronic devices are made of organic / inorganic material electronic devices on flexible / ductile plastic or thin metal substrates. Therefore, sea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04C01G3/12
CPCC01B19/007C01G3/12C01P2002/72
Inventor 唐新峰杨东旺黎俊姚磊柳伟鄢永高
Owner WUHAN UNIV OF TECH