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Light emitting diode chip and preparation method thereof

A technology of light-emitting diodes and chips, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of easy aging of electrode structures, achieve the effects of improving aging conditions, fewer process steps, and reducing power consumption

Active Publication Date: 2019-02-12
宁波安芯美半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a light-emitting diode chip, which is used to solve the technical problem that the electrode structure of the light-emitting diode chip is easy to age in the prior art

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  • Light emitting diode chip and preparation method thereof
  • Light emitting diode chip and preparation method thereof
  • Light emitting diode chip and preparation method thereof

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Embodiment Construction

[0032] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] see Figure 1-4B . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily ...

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Abstract

The invention provides a preparation method of a light emitting diode chip. The preparation method comprises the following steps: providing a substrate; forming a first semiconductor layer on the substrate; forming a light emitting layer on the first semiconductor layer; forming a second semiconductor layer on the light emitting layer; forming a transparent conductive layer on the second semiconductor layer; forming a first electrode on the first semiconductor layer; and forming a second electrode on the transparent conductive layer, wherein the first electrode and the second electrode structurally comprises multiple conductive layers; the outermost layer of the multiple conductive layers is a metal titanium layer; and the thickness of the metal titanium layer is as shown in the specification. According to the light emitting diode chip prepared according to the preparation method, the aging performance of a chip can be improved, and the voltage is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode chip. Background technique [0002] Due to the advantages of high color purity, fast response, small size, good reliability, long life, and environmental protection, light-emitting diodes have undoubtedly become the most valued light source technology. With the development of technology, the requirements for high-pixel screens have become more prominent. The requirements for size chips are getting higher and higher. [0003] The electrode structure of light-emitting diodes is divided into two types, one is a single-electrode structure, and the other is a double-electrode structure. Whether the electrode structure of a light-emitting diode is a single-electrode structure or a double-electrode structure depends on the chip material. Generally speaking, binary (GaAs), ternary (GaAsp), quaternary (AlGaInP), and SiC materials adop...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/40H01L33/30H01L33/00
CPCH01L33/0062H01L33/30H01L33/36H01L33/40
Inventor 张洪波吴化胜刘亚柱
Owner 宁波安芯美半导体有限公司
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