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2.7-micron luminescent high-concentration tellurium-gallium-zinc doped laser glass and preparation method thereof

A laser glass, high-concentration technology, applied in the field of optical materials, can solve the problems of poor physical and chemical properties of fluoride glass, low anti-laser damage threshold, etc. Effect

Active Publication Date: 2019-02-22
SOUTH CHINA UNIV OF TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the glass matrix for achieving 2.7 μm laser is limited to fluoride glass. However, fluoride glass has the disadvantages of poor physical and chemical properties and low laser damage threshold. Therefore, it is necessary to explore new laser glass matrix

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  • 2.7-micron luminescent high-concentration tellurium-gallium-zinc doped laser glass and preparation method thereof
  • 2.7-micron luminescent high-concentration tellurium-gallium-zinc doped laser glass and preparation method thereof
  • 2.7-micron luminescent high-concentration tellurium-gallium-zinc doped laser glass and preparation method thereof

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Embodiment Construction

[0026] The embodiments of the present invention will be further described below in conjunction with specific examples and drawings, but the embodiments of the present invention are not limited thereto.

[0027] The composition and proportioning of the glass that 7 concrete examples of the present invention make see table 1 below, wherein Er 2 o 3 Introduced into the glass composition in the form of external doping.

[0028] Table 1

[0029]

[0030] The preparation steps of gallium zinc telluride laser glass in embodiment 1-2 are as follows:

[0031] (1) Accurately weigh 20g of raw materials according to composition and proportioning, all of which are high-purity raw materials (>99.99%), wherein the raw materials of Example 1 are: TeO 2 : 14.68g, Ga 2 o 3 : 4.74g, ZnO: 0.57g, Er 2 o 3 : 0g; The raw material of embodiment 2 is: TeO 2 : 14.78g, Ga 2 o 3 : 4.38g, ZnO: 0.56g, Er 2 o 3 : 0.29g;

[0032] (2) the raw material gained in step (1) is mixed in agate morta...

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Abstract

The invention discloses a 2.7-micron luminescent high-concentration tellurium-gallium-zinc doped laser glass and a preparation method thereof. The molar percentage composition range of the glass is that TeO2 is 62-98%; Ga2O3 is 2-20%; ZnO is 2-38%; Er2O3 is 0-4%. The glass is prepared by a melting cooling method. The prepared glass has the characteristics of a large glass forming area, low phononenergy (765cm-1) and high fluorescence quenching concentration (3 mol%). Under the condition of pumping of 808 nm and 980 nm laser diodes (LD), very strong 2.7-micron waveband fluorescence can be obtained, the attenuation life of can be directly detected 2.7-micron waveband fluorescence can be directly monitored, and the glass is suitable for preparation and application of 2.7-micron laser glass fibers, fiber amplifiers and fiber lasers.

Description

technical field [0001] The invention belongs to the field of optical materials, and in particular relates to a 2.7 μm luminescent high-density doped tellurium-gallium-zinc laser glass and a preparation method thereof. Background technique [0002] The 2.7μm band fiber laser has important potential applications in medical surgery and military defense. The rare earth ion that achieves 2.7μm luminescence is Er 3+ ions, corresponding 4 I 11 / 2 → 4 I 13 / 2 Energy level transition, which has strong absorption peaks at 808nm and 980nm, so it can be pumped by corresponding high-power semiconductor lasers. At present, the glass matrix for achieving 2.7 μm laser is limited to fluoride glass. However, fluoride glass has the disadvantages of poor physical and chemical properties and low laser damage threshold. Therefore, it is necessary to explore new laser glass matrix. Contents of the invention [0003] In order to overcome the above-mentioned shortcomings and deficiencies of th...

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Application Information

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IPC IPC(8): C03C4/00C03C3/12C03B5/06C03B5/16C03B19/02C03B25/02
CPCC03B5/06C03B5/16C03B19/02C03B25/02C03B2201/60C03C3/122C03C4/0071
Inventor 张勤远王伟超李丽秀毛理燕刘金麟
Owner SOUTH CHINA UNIV OF TECH