Patterning of nanostructures using imprint lithography

A technology of dimensional structure and nano-particles, which is applied in the direction of originals, applications, printing, etc. for photomechanical processing, and can solve problems such as shrinkage, feature deformation, and elevated temperature

Inactive Publication Date: 2019-03-01
UNIV OF MASSACHUSETTS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, elevated temperatures are required after imprinting to impart conductivity and remove organic ligands bound to gold NPs to impart ink stability, resulting in significant shrinkage and feature deformation.

Method used

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  • Patterning of nanostructures using imprint lithography
  • Patterning of nanostructures using imprint lithography
  • Patterning of nanostructures using imprint lithography

Examples

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Embodiment Construction

[0084] Various embodiments of the present invention may be better understood by reference to the following examples, which are provided by way of illustration. The invention is not limited to the examples given herein.

[0085] Fabrication of PDMS impressions.

[0086] Patterned PDMS stamps were fabricated by casting PDMS on a silicon master. The silicon master was cleaned in concentrated sulfuric acid and then treated in an oxygen plasma cleaner for 15 minutes. The silicon master was then placed in a degassed glass jar at 80 °C, into which 1 volume percent of heptadecafluoro-1,1,2,2-tetrahydrodecyl)chlorosilane (Gelest Corp. ) for a period of 12 hours. During this process, self-assembled monolayers of long-chain fluorinated alkanes are produced on the silicon master, which lowers the surface energy of the silicon master and facilitates easy removal of the cured resin cast on it in the next step. PDMS impression.

[0087] PDMS stamps were prepared from silicon masters w...

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Abstract

Various embodiments disclosed relate to methods of manufacturing a textured surface comprising disposing a nanoparticulate ink on a substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority to U.S. Provisional Patent Application Serial No. 62 / 359,967, entitled "DIRECT PATTERNING OF OXIDENANOSTRUCTURES USING IMPRINT LITHOGRAPHY AND NANOPARTICLE DISPERSION INKS," filed July 8, 2016, the disclosure of which is incorporated by reference in its entirety This article. [0003] statement of government support [0004] This invention was made with Government support under CMMI-1025020 and CMMI-1258336 awarded by the National Science Foundation. The US Government has certain rights in this invention. Background technique [0005] Patterned metal oxide and semiconductor films are ubiquitous in functional device structures. Typical fabrication paths are subtractive in nature and include multiple steps, including deposition of planar films by chemical or physical deposition methods such as sputtering or chemical vapor deposition, application of photoresist, use of phot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D5/02B32B3/10B32B5/16B32B5/30B41M1/24
CPCB32B5/16B32B5/30B32B3/10C23C18/06C23C18/1254C23C18/1283G03F1/00C09D11/033C09D11/037H01L21/02288G03F7/0002B29C71/02B29C2071/022C09D11/52
Inventor 詹姆斯·J·沃特金斯罗希特·科塔里
Owner UNIV OF MASSACHUSETTS
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