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Method for forming semiconductor device

A technology of semiconductors and conductive materials, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Active Publication Date: 2021-02-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when reducing the minimum component size, additional issues arise that should be addressed

Method used

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  • Method for forming semiconductor device
  • Method for forming semiconductor device
  • Method for forming semiconductor device

Examples

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Embodiment Construction

[0035] It is to be appreciated that the following disclosure provides many different embodiments, or examples, for implementing different elements of the presented subject matter. Specific examples of each component and its arrangement are described below in order to simplify the description of the disclosure. Of course, these are examples only and are not intended to limit the present disclosure. For example, the following disclosure describes that a first component is formed on or over a second component, which means that it includes the embodiment in which the first component is formed in direct contact with the second component, and also includes In addition, an additional component may be formed between the first component and the second component, so that the first component may not be in direct contact with the second component. In addition, different examples in the disclosure may use repeated reference signs and / or words. These repeated symbols or words are used for...

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Abstract

In one embodiment, a method includes forming a gate stack on a semiconductor fin, the gate stack having a plurality of gate spacers extending along opposite sides of the gate stack; forming a source / drain adjacent to the gate stack region; recessing the gate stack to form a first recess between the gate spacers; depositing a dielectric layer over the gate stack in the first recess; the dielectric layer and the gate stack in the first recess forming a first metal mask over; etching back the dielectric layer and gate spacers to form the dielectric mask under the first metal mask; depositing a conductive material over the first metal mask and adjacent to the gate stack; and The conductive material is planarized to form a contact electrically connected to the source / drain region, and the top surface of the contact is flush with the top surface of the dielectric mask.

Description

technical field [0001] Embodiments of the disclosure relate to semiconductor technology, and in particular to a method of forming a semiconductor device having a Fin Field-Effect Transistor (FinFET). Background technique [0002] Semiconductor devices are used in various electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic equipment, for example. The manufacture of semiconductor devices generally consists of sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers on a semiconductor substrate, and patterning various material layers using photolithography to form circuit components and components on top of them. superior. [0003] The semiconductor industry continues to improve the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.) by continuously reducing the size of the minimum feature, so that more components can be ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/04H01L21/28
CPCH01L21/02225H01L21/04H01L21/28H01L29/0847H01L29/6656H01L29/66545H01L29/41725H01L29/41791H01L29/66795H01L21/76897H01L21/76834H01L21/76802H01L29/66348H01L29/7848H01L29/785H01L21/31144H01L21/823821
Inventor 锺泽良黄骑德孙旭昌陈科维
Owner TAIWAN SEMICON MFG CO LTD