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Thin film transistor, preparation method thereof and display device

A technology of thin-film transistors and reactive gases, which is applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., can solve the problem of small switching ratio of thin-film transistors, and achieve the effect of increasing the switching ratio, improving performance, and increasing the on-state current

Active Publication Date: 2019-03-08
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide a thin film transistor, a preparation method thereof, and a display device for the problem of the small switch ratio of the thin film transistor.

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  • Thin film transistor, preparation method thereof and display device
  • Thin film transistor, preparation method thereof and display device
  • Thin film transistor, preparation method thereof and display device

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Embodiment Construction

[0040] In order to facilitate the understanding of the present invention, the following will describe the present invention more fully. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0041] In the description of the present invention, it should be understood that the terms "first" and "second" are used for description purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of said features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0042] Unless otherwise defined, all technical a...

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Abstract

The invention relates to a thin film transistor, a preparation method thereof and a display device. The preparation method of the thin film transistor comprises the steps of: forming a gate, a gate insulating layer and a channel layer on a substrate; forming a source and a drain on the channel layer, wherein the source and the drain are alternately arranged to form a gap, and the source and the drain are metal electrodes with a hydrogen absorption property; forming a passivation layer by using deposition of hydrogen atom-containing reaction gas to ensure that the passivation layer is doped with hydrogen ions, wherein the passivation layer covers the channel layer, the source and the drain; and carrying out annealing treatment to ensure that the hydrogen ions in the passivation layer are diffused to the channel layer, form areas not doped with hydrogen in areas corresponding to the source and the drain in the channel layer and form areas doped with hydrogen in other areas of the channellayer, thereby decreasing the length of an intrinsic semiconductor channel, namely, increasing the equivalent width-length ratio of the thin film transistor, improving the ON-state current of the thin film transistor, increasing the switch ratio of the thin film transistor and improving the driving ability of the thin film transistor.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a preparation method thereof, and a display device. Background technique [0002] Thin film transistors are widely used as a pixel switching element in the field of display technology. Among them, the field effect mobility, switching ratio, transconductance, etc. of the thin film transistor are the key to determine the performance of the display device. The higher the field effect mobility of the thin film transistor, the larger the switching ratio, and the larger the transconductance, it means that the driving capability and switching speed of the thin film transistor are higher, which can support technical requirements such as high resolution and high frame rate of the display device. [0003] Traditional thin film transistors are mainly based on silicon-based semiconductor materials, such as amorphous silicon (a-Si:H) and polycrystalline silicon (p-Si...

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Application Information

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IPC IPC(8): H01L21/336H01L29/786H01L21/324H01L27/32G02F1/1368
CPCH01L29/66969H01L29/78693G02F1/1368H01L21/324H10K59/12
Inventor 刘川陈昌东郑集文李恭檀李敏敏
Owner SUN YAT SEN UNIV
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