Thin film transistor and its manufacturing method, display device

Abstract

The invention relates to a thin film transistor, a preparation method thereof, and a display device. The preparation method of the thin film transistor includes forming a gate, a gate insulating layer and a channel layer on a substrate; forming a source electrode and a drain electrode on the channel layer; The electrode and the drain are spaced apart to form a gap, and the source and drain are metal electrodes with hydrogen absorption properties; the passivation layer is formed by deposition of a reactive gas containing hydrogen atoms, so that the passivation layer is doped with hydrogen ions, and the passivation layer covers Channel layer, source and drain; annealing treatment, so that the hydrogen ions in the passivation layer diffuse to the channel layer, and the regions corresponding to the source and drain in the channel layer are formed without hydrogen doping The rest of the channel layer forms a hydrogen-containing doped region, thereby reducing the length of the intrinsic semiconductor channel, which is equivalent to increasing the equivalent width-to-length ratio of the thin-film transistor and improving the on-state current of the thin-film transistor. , the switching ratio of the thin film transistor is increased, and the driving capability of the thin film transistor is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a preparation method thereof, and a display device. Background technique [0002] Thin film transistors are widely used as a pixel switching element in the field of display technology. Among them, the field effect mobility, switching ratio, transconductance, etc. of the thin film transistor are the key to determine the performance of the display device. The higher the field effect mobility of the thin film transistor, the larger the switching ratio, and the larger the transconductance, it means that the driving capability and switching speed of the thin film transistor are higher, which can support technical requirements such as high resolution and high frame rate of the display device. [0003] Traditional thin film transistors are mainly based on silicon-based semiconductor materials, such as amorphous silicon (a-Si:H) and polycrystalline silicon (p-Si...

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Problems solved by technology

[0005] Based on this, it is necessary to provide a thin film transistor, a preparation method thereof, and a display device for the problem of the small switch ratio of the thin film transistor.

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