Laser capable of improving light absorption rate of quantum well, and preparation method thereof

Abstract

The invention relates to a laser capable of improving light absorption rate of a quantum well, and a preparation method thereof. The laser comprises: an n-type metal layer, an n-type GaN buffer layer,an n-type lower confinement layer, an n-type lower waveguide layer, a quantum well layer, a p-type upper waveguide layer, a p-type upper confinement layer, a p-type GaN contact layer, and a p-type metal layer, which are sequentially stacked on an n-type GaN substrate, wherein onion-like carbon beads are periodically arranged in the quantum well layer, and the onion-like carbon beads have a diameter of 0.7 to 1.0 nm. The invention forms a surface plasmon effect by placing periodically arranged onion-like carbon beads in a quantum well, thereby forming absorption enhancement for a correspondingwavelength of a pump source, while the absorption enhancement at a specific wavelength does not affect the generated laser. The increased utilization of pump light results in a significant reductionin Joule heat in the active region, thereby effectively extending the service life of the laser.

Description

technical field [0001] The invention relates to the field of lasers, in particular to a laser capable of improving the light absorption rate of quantum wells and a preparation method thereof. Background technique [0002] Optically pumped semiconductor laser is a new type of laser that has developed rapidly in recent years. It combines the advantages of diode-pumped solid-state lasers and semiconductor vertical cavity surface emitting lasers, such as high power, single-mode, output circularly symmetrical spot and easy intracavity multiplication. frequency etc. For optically pumped semiconductor lasers, as the pump power density increases, the operating temperature of the device rises, causing carriers to jump out of the quantum well directly into the potential barrier, resulting in non-radiative recombination, resulting in a decrease in output power. At the same time, as the temperature rises, the mobility of the generated photogenerated carriers is greatly reduced, so that...

AI Technical Summary

Problems solved by technology

Therefore, increasing the thickness of the quantum well is not only not conducive to the heat dissipation of the quantum well, but also cannot improve the utilization rate of the pump light in the quantum well region.

[0004] Another method to improve the utilization of pump light by increasing the pump power density also has two problems: one is to cause thermal escape of the carriers in the quantum well; Most of the photogenerated carriers generated in the quantum well region do not diffuse into the quantum well region, but enter the barrier layer or undergo non-radiative recombination in the absorber layer

Cannot improve the absorption of pump light in the active region

Images