The present invention relates to an AlGaInP semiconductor laser with a superlattice limiting layer. The AlGaInP semiconductor laser includes a substrate, a lower limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, a first upper limiting layer, a second upper limiting layer and an ohmic contact layer from the bottom to the top. The first upper limiting layer isa superlattice structure in which an AlGaInP material of a high aluminum component and an AlGaInP material of a low aluminum component are alternately grown, in the first upper limiting layer, the doping material of the AlGaInP material of the high aluminum component is Mg, the doping material of the AlGaInP material of the low aluminum component is Mg, the second upper limiting layer is the AlGaInP material of the high aluminum component, and the doping material of the second upper limiting layer is Mg. According to the AlGaInP semiconductor laser, the highly doped first upper limiting layerand second upper limiting layer are used, the series resistance of an epitaxial layer can be reduced, the generation of Joule heat is reduced, and the photoelectric conversion efficiency is improved.