Resonant SiC MOSFET bridge arm crosstalk suppression drive circuit and control method thereof

Abstract

The invention provides a resonant SiC MOSFET bridge arm crosstalk suppression drive circuit and a control method thereof. The circuit comprises a first voltage totem pole structure circuit connected between a first forward power supply and a first reverse power supply of an upper bridge arm; a first drive resistor circuit; a first low impedance circuit connected between a gate and a source of an upper tube; a second voltage totem pole structure circuit connected between a second forward power supply and a second reverse power supply of a lower bridge arm; a second drive resistor circuit; and asecond low impedance circuit connected between the gate and the source of a lower tube. An input end of the first drive resistor circuit is connected with an output end of the first voltage totem pole structure circuit, and an output end is connected with the gate of the upper tube. The input end of the second drive resistor circuit is connected with the output end of the second voltage totem pole structure circuit, and the output end is connected with the gate of the lower tube. The upper tube is connected with the lower tube. According to the circuit, performance advantage of a SiC MOSFET high speed switch can be exerted fully, a bridge arm crosstalk suppression function is realized, and moreover, the high speed switch also can be realized.

Description

technical field [0001] The invention belongs to the technical field of SiC MOSFET drive design, in particular to a resonant SiC MOSFET bridge arm crosstalk suppression drive circuit and a control method thereof. Background technique [0002] Compared with traditional Si (silicon) devices, SiC (silicon carbide) devices have wider band gap, higher thermal conductivity, higher critical field strength and faster saturation electron mobility, and its turn-on voltage It has the characteristics of high temperature resistance and high pressure resistance, so it has great application prospects in the fields of aerospace, hybrid electric vehicles, solar inverters, power factor correction, UPS and motor drives. [0003] In the bridge arm circuit as a commonly used circuit structure in the converter, the same bridge arm has two upper and lower switching tubes, and the upper and lower tubes are complementary to conduction. / dt, the existence of parasitic parameters at this time will cau...

AI Technical Summary

Problems solved by technology

[0004] In the current literature, for the problem of bridge arm crosstalk in the application of SiC-based bridge arm circuits, the commonly used methods include connecting an external capacitor in parallel between the gate and source of the power tube, increasing the negative bias voltage at the gate and source of the power tube when the power tube is turned off, active Miller clamp and other methods, among them, the parallel capacitance method reduces the switching speed and increases the switching loss, and the method of increasing the gate negative bias voltage will increase the stress of the SiC MOSFET gate oxide layer and shorten the device life

In addition, the method of active Miller clamp requires an external control signal, and the control is complicated

While suppressing the crosstalk problem of SiC MOSFET bridge arms, these methods have the disadvantages of reducing switching speed, increasing switching loss, driving loss, and inability to suppress negative crosstalk voltage, and their practical application value is limited.

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