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Measurement method of 1 mev equivalent neutron fluence in spallation neutron source based on gate control technology

A spallation neutron source and grid-controlled technology, applied in the field of radiation detection, can solve the problem of limited equivalent neutron flux, and achieve the effect of high measurement accuracy

Active Publication Date: 2019-09-27
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0004] In order to solve the technical problem of limited means for measuring low-flux 1MeV equivalent neutron fluence in existing spallation neutron sources, the present invention provides a CSNS spallation neutron source 1MeV equivalent neutron fluence based on gate-controlled lateral PNP transistor charge separation technology. The method of neutron fluence measurement

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  • Measurement method of 1 mev equivalent neutron fluence in spallation neutron source based on gate control technology
  • Measurement method of 1 mev equivalent neutron fluence in spallation neutron source based on gate control technology
  • Measurement method of 1 mev equivalent neutron fluence in spallation neutron source based on gate control technology

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Embodiment Construction

[0045] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0046] The gate-controlled lateral PNP transistor actually adds a control gate above the base oxide layer that is sensitive to radiation effects to form a PMOS structure, such as figure 1 shown. After the irradiation experiment, the concentration of interface state traps was obtained by measuring the base bias current at different gate voltages.

[0047] The influence of radiation damage on the base current of bipolar transistors mainly comes from the recombination of carriers in the bulk silicon and on the surface of the device, but the surface recombination is extremely related to the magnitude of the gate voltage. For PNP transistors, the positive oxide trap charges accumulate carriers at the interface, which weakens the role of interface state traps as recombination centers. When the gate voltage can reduce the influence of the oxide trap...

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Abstract

The invention provides a method for measuring the 1MeV equivalent neutron flux of a spalling neutron source on the basis of a grid control technology. The method solves the technical problem that existing means for measuring the low-pass 1MeV equivalent neutron flux of spalling neutron sources are limited. According to the method, by utilizing the characteristic of the linear relation between minority carrier lifetime reciprocals of bipolar transistors and the 1MeV equivalent neutron flux, the 1MeV equivalent neutron flux of the spalling neutron source is calculated on the basis of a minoritycarrier lifetime damage constant of 1MeV equivalent neutrons of a reactor on transverse transistors. The method can keep high measurement accuracy in a wide neutron flux range.

Description

technical field [0001] The invention belongs to the field of radiation detection, and relates to a method for measuring 1 MeV equivalent neutron fluence of a spallation neutron source based on a gate-controlled lateral PNP transistor charge separation technology. Background technique [0002] Devices such as spallation neutron sources and neutron generators can provide a low-flux neutron radiation environment for scientific research. The spallation neutron source is a large scientific device for studying neutron properties and detecting the microstructure and motion of matter. The split neutron source uses high-energy lightly charged particles to bombard heavy nuclei, and a spallation reaction occurs to generate a large number of fast neutrons. These neutrons pass through the moderator and reflective layer and become neutrons with a wide energy distribution. The spallation neutron source does not use nuclear fuel, is clean and easy to control; the neutron beam is pure, and t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T3/08
Inventor 刘岩陈伟郭晓强金晓明李俊霖白小燕王晨辉薛院院
Owner NORTHWEST INST OF NUCLEAR TECH
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