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Integrated device having thin film transistor device and preparation method thereof

A thin-film transistor and integrated device technology, applied in the electronic field, can solve the problems of occupying too much space, the internal structure of the liquid crystal panel is bloated and complicated, and the effective area of ​​display or detection is reduced.

Inactive Publication Date: 2019-03-19
SHENZHEN GOODIX TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Specifically, each row and each column of the TFT array needs to be connected to the IC chip. If there are 200*200 pixel units in total (general display devices are much larger than this value), at least 400 terminals need to be connected to the IC chip. Therefore, the connection between the TFT array and the IC chip will take up too much space, and at the same time, a large number of FPCs are required as the connection medium, which reduces the effective area of ​​display or detection in the entire system structure, making the internal structure of the liquid crystal panel bloated and complicated.

Method used

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  • Integrated device having thin film transistor device and preparation method thereof
  • Integrated device having thin film transistor device and preparation method thereof
  • Integrated device having thin film transistor device and preparation method thereof

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Embodiment Construction

[0107] Embodiments of the present application provide an integrated device containing TFT devices and a method for manufacturing the integrated device. The integrated device containing TFT devices may include a plurality of TFTs. When the plurality of TFTs are distributed in an array, the TFTs The device is also called a TFT array, a TFT array device or a photoelectric sensor. The integrated device including the TFT device in the embodiment of the present application can simplify and miniaturize the connection between the TFT device and the IC chip.

[0108] The integrated device in the embodiment of the present application can be applied to the field of TFT flat panel display, TFT-based flat panel sensor, and other products and applications based on TFT technology. For example, the integrated device may be applied to an optoelectronic display device having an active matrix or a self-luminous optoelectronic display device. For example. Liquid crystal display devices and orga...

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Abstract

An integrated device having a thin film transistor device and a preparation method thereof are provided. The integrated device includes: a substrate, a chip, and a thin film transistor device, whereinthe thin film transistor device is disposed above the substrate; an upper surface of the substrate extends downward to form a groove-like structure; at least one connecting line is disposed in the groove-like structure; and the chip is disposed in the groove-like structure and connected to the thin film transistor device through the at least one connecting line. The integrated device provided bythe embodiment of the present application forms a thin film transistor (TFT) through the substrate and the thin film transistor device, and further, the chip for controlling the TFT is integrated in the substrate of the TFT, thereby avoiding the effective working area of the TFT occupied by the chip. At the same time, the external connection terminals of the integrated device can be greatly reduced, thereby simplifying the overall structure of the integrated device.

Description

technical field [0001] The embodiments of the present application relate to the field of electronics, and more specifically, relate to an integrated device with a thin film transistor device and a manufacturing method thereof. Background technique [0002] At present, since thin film transistors (Thin film transistor, TFT) are manufactured in the liquid crystal panel, the mutual interference among the pixels can be reduced and the stability of the picture can be improved. Furthermore, the TFT technology using non-silicon substrates (such as glass substrates, organic polymer substrates, etc.) can fundamentally solve the cost problem of large-scale semiconductor integrated circuits. In addition, the TFT technology can also realize large-scale production, large-scale production, and integrated production of circuit devices (for example, the driving circuit area and the pixel area can be integrally formed). Therefore, TFT technology is widely used in fields such as flat panel d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L27/32G02F1/1368
CPCH01L25/16G02F1/1368H10K59/12
Inventor 王文轩沈健
Owner SHENZHEN GOODIX TECH CO LTD
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