Integrated device having a thin film transistor device and prepration method thereof

Abstract

An integrated device having a thin film transistor device and a prepration method thereof are provided. The integrated device includes: a substrate, a chip, an etch barrier layer, and a thin film transistor device, wherein the thin film transistor device is disposed above the etch barrier layer; the substrate is disposed under the etch barrier layer; the etching rate of the etch barrier layer is greater than the etching rate of the substrate under the same etching condition, and the lower surface of the substrate is extended upward to form a groove-like structure, and the bottom of the groovestructure is provided with at least one thorugh hole penetrating through the etch barrier layer; the chip is disposed within the groove-like structure; and the chip is connected to the thin film transistor device through the at least one through hole. The integrated device provided by the present application forms a thin film transistor (TFT) through the substrate and the thin film transistor device, and further, the chip for controlling the TFT is integrated in the substrate of the TFT, which can effectively simplify the overall structure of the integrated device.

Description

technical field [0001] The embodiments of the present application relate to the field of electronics, and more specifically, relate to an integrated device with a thin film transistor device and a manufacturing method thereof. Background technique [0002] At present, since thin film transistors (Thin film transistor, TFT) are manufactured in the liquid crystal panel, the mutual interference among the pixels can be reduced and the stability of the picture can be improved. Furthermore, the TFT technology using non-silicon substrates (such as glass substrates, organic polymer substrates, etc.) can fundamentally solve the cost problem of large-scale semiconductor integrated circuits. In addition, the TFT technology can also realize large-scale production, large-scale production, and integrated production of circuit devices (for example, the driving circuit area and the pixel area can be integrally formed). Therefore, TFT technology is widely used in fields such as flat panel d...

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Problems solved by technology

[0004] Specifically, each row and each column of the TFT array needs to be connected to the IC chip. If there are 200*200 pixel units in total (general display devices are much larger than this value), at least 400 terminals need to be connected to the IC chip. Therefore, the connection between the TFT array and the IC chip will take up too much space, and at the same time, a large number of FPCs are required as the connection medium, which reduces the effective area of ​​display or detection in the entire system structure, making the internal structure of the liquid crystal panel bloated and complicated.

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