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A kind of red LED epitaxial structure and manufacturing method

A technology of epitaxial structure and manufacturing method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor current expansion, low hole migration, low doping difficulty concentration, etc., and achieve the effect of improving internal quantum efficiency

Active Publication Date: 2020-07-03
YANGZHOU CHANGELIGHT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the current spreading of epitaxial structures in red LEDs is not good, the hole migration is low and the concentration of doping difficulty is low

Method used

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  • A kind of red LED epitaxial structure and manufacturing method
  • A kind of red LED epitaxial structure and manufacturing method
  • A kind of red LED epitaxial structure and manufacturing method

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Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0033] refer to figure 1 , figure 1 A schematic diagram of a red LED epitaxial structure provided by an embodiment of the present invention, the red LED epitaxial structure includes:

[0034] Substrate 101;

[...

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Abstract

The invention provides a red-light LED epitaxial structure and a manufacturing method thereof. According to the red-light LED epitaxial structure, with a memory layer, holes are collected; with continuously increasing of holes and generation of lots of holes by the memory layer, holes jumping from a first GaP layer and a second GaP layer have the high hole potential energy and thus more holes aregenerated by the collision among the holes and jump to an MWQ multi-quantum well layer being an active region, thereby providing the higher electron-hole pair and thus increasing the internal quantumefficiency. Meanwhile, for growth of the first InGaP layer and the second InGaP layer, high doping grows at a low temperature; and with the first GaP layer and the second GaP layer, the influence on the In during the high temperature growth is reduced, so that the high electric hole is provided.

Description

technical field [0001] The invention relates to the technical field of LEDs, and more specifically, to a red LED epitaxial structure and a manufacturing method. Background technique [0002] With the continuous development of science and technology, various LEDs (Light Emitting Diodes, light emitting diodes) have been widely used in people's daily life, work and industry, bringing great convenience to people's life. [0003] However, the current spread of the epitaxial structure in the current red LED is not good, the hole migration is low and the doping concentration is low. Contents of the invention [0004] In view of this, in order to solve the above problems, the present invention provides a red LED epitaxial structure and manufacturing method, the technical solution is as follows: [0005] A kind of red light LED epitaxial structure, described red light LED epitaxial structure comprises: [0006] Substrate; [0007] A buffer layer, an N-type DBR mirror layer, an N...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/14H01L33/00
CPCH01L33/0062H01L33/06H01L33/14
Inventor 田宇韩效亚吴真龙杜石磊
Owner YANGZHOU CHANGELIGHT