Main circuit topology based on igbt parallel current sharing

Abstract

The invention discloses a main circuit topology structure based on IGBT parallel current sharing. The topology structure includes a high-power main thin-film capacitor module, a DC bus-bar, a three-phase IGBT parallel half-bridge component and a three-phase output copper bar. The high-power main thin-film capacitor module is connected with the DC bus-bar. The input terminal of the three-phase IGBTparallel half-bridge component is connected with the DC bus-bar, and the output terminal is connected with the three-phase output copper bar. The three-phase output copper bar is connected with the three-phase terminal of a motor. The topology structure further includes three auxiliary thin-film capacitors. The DC bus-bar is arranged by means of lamination. The three auxiliary thin-film capacitors are arranged on the output side of the three-phase IGBT parallel half-bridge component and are connected with the DC bus-bar. The three-phase IGBT parallel half-bridge component is arranged betweenthe high-power main thin-film capacitor module and the three auxiliary thin-film capacitors. The structure overcomes the influence of unbalanced stray inductance and impedance in the main circuit on current sharing of parallel IGBT, improves the current sharing characteristic of parallel IGBT and enhances the service life of parallel IGBT.

Description

technical field [0001] The invention relates to a main circuit topology structure based on IGBT parallel current sharing. Background technique [0002] As a common power device, IGBT is used in various power devices. Whether it is limited by the insufficient current capacity of a single module, or the cost advantage of the parallel connection scheme, or the system scalability and serialization requirements, more and more The application needs to use the IGBT parallel scheme. [0003] The key to the parallel use of IGBTs is to balance the thermal power consumption of the parallel IGBTs and reduce the difference in the life of the parallel IGBTs. The key to the balance of IGBT thermal power consumption lies in the current sharing of dynamic current and quiescent current of parallel IGBTs. [0004] With the application of a new generation of IGBT wafers, since the saturation voltage drop of the existing parallel IGBTs has a positive temperature coefficient, dynamic current sh...

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Problems solved by technology

[0004] With the application of a new generation of IGBT wafers, since the saturation voltage drop of the existing parallel IGBTs has a positive temperature coefficient, dynamic current sharing has become a big obstacle restricting the parallel connection of IGBTs, so more attention is paid to dynamic current sharing in the prior art , many applications no longer focus on static current sharing

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