SiC MOSFET sub-module unit and crimping type package thereof

Abstract

The invention discloses a SiC MOSFET sub-module unit and crimping type packaging thereof, belongs to the technical field of semiconductor device packaging, and solves the problem that an existing SiC power chip is difficult to crimp and package. Each SiC MOSFET sub-module unit comprises a DBC (Direct Bond Copper) ceramic substrate, a source electrode molybdenum sheet, a SiCMOSFET chip array and a drain electrode molybdenum sheet; and N SiCMOSFET chips are arranged on the upper surface of the source electrode molybdenum sheet, N first protrusions are symmetrically arranged on the lower surface of the source electrode molybdenum sheet, the first protrusions are connected with the N SiCMOSFET chips respectively, grid electrodes and source electrodes of the SiCMOSFET chips are exposed, N second protrusions used for connecting and positioning the SiCMOSFET chips are arranged on the upper surface of the drain electrode molybdenum sheet, the SiCMOSFET chip array is composed of the N SiCMOSFET chips, and the exposed grid electrodes and source electrodes of the SiCMOSFET chips are connected to the DBC ceramic substrate. The power density of the module is improved, the heat dissipation capability is enhanced, the reliability of the device is improved, the insulation level of the module is improved by filling the module with silica gel, and the module can be applied to the high-voltage field.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor packaging, and in particular relates to a SiC MOSFET sub-module unit and a crimping type packaging thereof. Background technique [0002] As a wide bandgap power semiconductor device, SiC MOSFET has many advantages over traditional silicon devices, such as higher operating temperature, lower on-state loss, higher switching frequency and greater critical breakdown field strength. With the gradual promotion of the application of silicon carbide power devices, there is no mature and unified form for the packaging of high-voltage silicon carbide power devices. [0003] At present, the existing packaging forms of power devices are mainly divided into two types: soldering type packaging and crimping type packaging. Among them, the soldered package uses bonding wires to connect the chip to the power circuit. It is mainly used in medium and low voltage (650 to 3300V) application scenarios. In...

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Problems solved by technology

[0008] The purpose of the present invention is to provide a SiC MOSFET sub-module unit and its crimp-type packaging to overcome the problem that silicon carbide devices are difficult to carry out crimp-type packaging. The invention improves the power density of the module, and the double-sided heat dissipation structure enhances the The ability to dissipate heat improves device reliability and can be used in high-voltage fields

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