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Centrosymmetric IGBT multi-module parallel connection device

A center-symmetric, multi-module technology, applied in stackable modules, output power conversion devices, circuit layouts on support structures, etc., can solve problems such as inconvenient maintenance, low reliability, and high prices. Easy to install, improve heat dissipation efficiency, and improve the effect of current sharing characteristics

Inactive Publication Date: 2021-05-28
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous improvement of power levels, on the one hand, although IGBT modules with higher withstand voltage and higher power have been ready-made products, the driving circuit design is relatively simple, but it also comes with a series of problems such as high price, inconvenient maintenance and reliability. low sex issues

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  • Centrosymmetric IGBT multi-module parallel connection device
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  • Centrosymmetric IGBT multi-module parallel connection device

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Embodiment Construction

[0065] This application proposes a centrosymmetric IGBT multi-module parallel device. The specific implementation methods are divided into two types. The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments:

[0066] When N (N>2) IGBT modules 1 are connected in parallel and each IGBT module 1 is placed horizontally, the following is an example of parallel connection of 8 IGBT modules 1, as figure 1 as shown,

[0067] Eight parallel IGBT modules 1 are arranged in a ring shape, which is centrally symmetrical, and the eight IGBT modules 1 are connected together by a laminated busbar 2. The laminated busbar 2 also includes at least 8 sets of interfaces - 3, a set of 6 interfaces, each group of interface 3 is divided into two columns, one column of 3 interfaces, one column of interface-3 is used to connect the positive plate of the laminated busbar 2 with the power collector of the IGBT module 1, and the ...

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Abstract

The invention relates to a centrosymmetric IGBT multi-module parallel connection device, which comprises a plurality of IGBT modules, a laminated busbar, a heat dissipation plate and a supporting plate, wherein the IGBT modules, the laminated busbar, the heat dissipation plate and the supporting plate form a compact STACK layout, so that the modular design is realized, the design of a high-power converter becomes simpler, the STACK heat dissipation performance is optimized through the center hollowed-out design of the laminated busbar, the heat dissipation plate and the supporting plate, the overall power connection layout is in central symmetry, electromagnetic coupling generated when the IGBT module is switched on and off is reduced, in addition, through the terminal layout of the laminated busbar, the parasitic impedance of each current branch is balanced, the current balance degree between the IGBT modules connected in parallel is improved, expandability is achieved, and series-parallel connection between STACKs is easier to achieve.

Description

technical field [0001] The invention relates to the field of high-power converters, in particular to a center-symmetric IGBT multi-module parallel device. Background technique [0002] The most important part of modern power electronic systems is semiconductor devices. Among them, the insulated gate bipolar transistor IGBT combines the advantages of the field effect transistor MOSFET and the power transistor GTR, and is used in high-power converter applications such as electrified railway converters. It is widely used in inverters, industrial motor drive systems, and offshore wind power converters. With the continuous improvement of power levels, on the one hand, although IGBT modules with higher withstand voltage and higher power have been ready-made products, the driving circuit design is relatively simple, but it also comes with a series of problems such as high price, inconvenient maintenance and reliability. Sexuality and other issues. Therefore, the parallel use of I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/00H05K7/02H05K7/20
CPCH02M1/00H05K7/023H05K7/20509
Inventor 黄先进刘宜鑫王风川高冠刚陈澄孙湖
Owner BEIJING JIAOTONG UNIV
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