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Broadband active phase shifter

A phase shifter and broadband technology, applied in the field of active phase shifters, can solve the problems of poor performance of active phase shifters, large insertion loss, etc., to reduce area, reduce gain error, and reduce gain variation range effect

Active Publication Date: 2019-03-29
XIDIAN UNIV
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional active phase shifter mirrors the input current of the analog adder from the reference current through the digital-to-analog conversion circuit DAC, such as figure 1 As shown, but the traditional active phase shifter uses a digital-to-analog conversion circuit with a large transistor size, and when multiple modules are working, there is a large insertion loss, which leads to poor performance of the active phase shifter and cannot meet the application requirements. needs

Method used

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Examples

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Embodiment Construction

[0023] This example takes a broadband active phase shifter with insertion loss compensation in the range of 4 to 12 GHz as an example, but it is not limited to this frequency range.

[0024] refer to figure 2 , the active phase shifter of this example, including: balun, quadrature signal generator, analog adder, bandgap reference circuit and insertion loss compensation circuit; balun, quadrature signal generator, analog adder and insertion loss The compensation circuit is connected sequentially. The bandgap reference circuit has three outputs IB, IP and IQ, among which IB and IP are connected to the balun, and IQ is connected to the insertion compensation circuit. The balun has two outputs Vout+ and Vout-, and the quadrature signal The generator has two positive outputs IO+, QO+ and two negative outputs IO-, QO-, the analog adder has two outputs VO+ and VO-, and the single-ended RF signal is converted into opposite phase and same amplitude by balun circuit After the differen...

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Abstract

The invention discloses a broadband active phase shifter, which mainly solves the problem of large insertion loss in the existing active phase shifter. The broadband active phase shifter comprises a Balun, an orthogonal signal generator, an analog adder, an insertion loss compensation circuit, and a band-gap reference circuit, wherein the mentioned four circuits are sequentially connected, the band-gap reference circuit is connected between the Balun and the insertion loss compensation circuit; single-ended radio frequency signals are converted by the Balun into differential signals of the same amplitude and opposite phases; the differential signals generate four orthogonal signals with the same amplitude and 90-degree phase spacing through the orthogonal signal generator as the input of the analog adder; a cluster of phase-shifted signals are synthesized by orthogonal vector synthesis and are input to the insertion loss compensation circuit to reduce the gain error and obtain the output signal of the phase shifter. The broadband active phase shifter not only reduces the insertion compensation of the phase shifter, but also greatly reduces the area of the phase shifter by using theorthogonal signal generator and the analog adder, and can be used for the design of radio frequency integrated circuits.

Description

[0001] The invention belongs to the technical field of electronic devices, and in particular relates to an active phase shifter within the frequency range of 4 to 12 GHZ, which can be used in radio frequency integrated circuits requiring high-precision phase shifting in radio frequency microwave phased array receivers. Background technique [0002] Common semiconductor phase shifter structures include loaded linear phase shifters, reflective phase shifters, switched linear phase shifters, high-pass low-pass phase shifters and vector modulation phase shifters. Since it can provide good high-frequency performance, low substrate loss, and high-performance passive devices, III-V compound semiconductors have always been ideal for semiconductor phase shifters. However, III-V compound semiconductors and ultra-large-scale CMOS digital integrated circuits cannot be made on the same substrate, which limits the system integration of phased array systems, and for the commercial use of phas...

Claims

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Application Information

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IPC IPC(8): H03H11/16
CPCH03H11/16
Inventor 李振荣马凯王泽渊程夏禹段艺明庄奕琪
Owner XIDIAN UNIV
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