Preparation method of display substrate and display device

Abstract

The invention provides a preparation method of a display substrate and a display device, and relates to the technical field of display, and oxidization of a conductive structure prepared from copper by an oxide insulating layer can be lowered or avoided. The preparation method comprises the following steps that a conductive structure is formed above a substrate, wherein the conductive structure comprises at least one layer in the thickness direction, wherein a layer of the conductive structure which is farthest from the substrate is made of copper; the substrate with the conductive structure is not preheated, or, the time for carrying out pre-heating treatment on the substrate with the conductive structure is 5 seconds or less; and the oxygen-containing reaction gas and the reaction gas containing a preset element are subjected to a chemical vapor deposition reaction, and an oxide insulating layer for covering the conductive structure is formed, wherein the reaction temperature of thechemical vapor deposition reaction is 200-280 DEG C, and the ratio of oxygen atoms to atoms of the preset element in the oxygen-containing reaction gas and the reaction gas containing the preset element is 40:1 to 60:1.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a method for preparing a display substrate and a display device. Background technique [0002] Since copper (Cu) has many advantages over aluminum, such as lower resistivity, conductive structures (such as wires, etc.) in a display substrate (such as an array substrate) are usually made of copper. [0003] However, Cu atoms have strong reactivity and are prone to oxidation; when the insulating layer covering the surface of the conductive structure made of Cu is an oxide insulating layer, the surface of the conductive structure is easily oxidized, which affects the electrical properties of the conductive structure and limits Further extended application of the design method of "copper + oxide insulating layer". Contents of the invention [0004] In view of this, in order to solve the problems of the prior art, the embodiments of the present invention provide a method f...

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Problems solved by technology

[0003] However, Cu atoms have strong reactivity and are prone to oxidation; when the insulating layer covering the surface of the conductive structure made of Cu is an oxide insulating layer, the surface of the conductive structure is easily oxidized, which affects the electrical properties of the conductive structure and limits Further extended application of the design method of "copper + oxide insulating layer"

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