Manufacturing method of display substrate, display device

Abstract

The invention provides a method for preparing a display substrate and a display device, which relate to the field of display technology and can reduce or avoid the oxidation of a conductive structure made of copper by an oxide insulating layer. The preparation method includes: forming a conductive structure above the base substrate; the conductive structure includes at least one layer along the thickness direction; wherein, the layer farthest from the base substrate among the at least one layer is made of copper; The base substrate of the structure is not preheated, or the preheating time of the base substrate formed with the conductive structure is less than 5s; the chemical vapor deposition reaction occurs between the oxygen-containing reaction gas and the preset element-containing reaction gas, Form an oxide insulating layer covering the conductive structure; wherein, the reaction temperature of the chemical vapor deposition reaction is 200°C-280°C, and the ratio of oxygen atoms to atoms of the predetermined element in the oxygen-containing reaction gas and the reaction gas containing the predetermined element is 40 :1‑60:1.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing a display substrate and a display device. Background technique [0002] Since copper (Cu) has many advantages over aluminum, such as lower resistivity, conductive structures (such as wires, etc.) in a display substrate (such as an array substrate) are usually made of copper. [0003] However, Cu atoms have strong reactivity and are prone to oxidation; when the insulating layer covering the surface of the conductive structure made of Cu is an oxide insulating layer, the surface of the conductive structure is easily oxidized, which affects the electrical properties of the conductive structure and limits Further extended application of the design method of "copper + oxide insulating layer". Contents of the invention [0004] In view of this, in order to solve the problems of the prior art, the embodiments of the present invention provide a method for prepa...

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Problems solved by technology

[0003] However, Cu atoms have strong reactivity and are prone to oxidation; when the insulating layer covering the surface of the conductive structure made of Cu is an oxide insulating layer, the surface of the conductive structure is easily oxidized, which affects the electrical properties of the conductive structure and limits Further extended application of the design method of "copper + oxide insulating layer"

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