MEMS process-based high-Q value three-dimensional spiral structure inductor and fabrication method thereof

A helical structure and manufacturing method technology, applied in the field of microelectronics, can solve the problems of inconvenient IC compatible integration, insufficient mechanical stability, and difficulty in subsequent packaging, and achieve the effects of cost control, high Q value, and cost saving

Inactive Publication Date: 2019-04-09
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the above-mentioned methods have various problems such as process complexity, inconvenient IC compatible integration, difficulty in subsequent packaging, insufficient mechanical stability, high process cost and difficulty, etc.

Method used

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  • MEMS process-based high-Q value three-dimensional spiral structure inductor and fabrication method thereof
  • MEMS process-based high-Q value three-dimensional spiral structure inductor and fabrication method thereof

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Embodiment Construction

[0043] exist figure 1 It is a high-Q eight-layer spiral structure integrated inductor structure based on MEMS technology, figure 2 It is a top view of the inductor, in which the input and output terminals of the inductor are on the same plane, which is convenient for later inductor testing and packaging.

[0044] Before the photolithography process, the mask plate is designed, which is a relatively high part of the process cost. Considering that the vertical solenoid inductor with multilayer coils has a certain geometric repeatability, taking the designed 8-layer vertical solenoid inductor as an example, the mask pattern required for 5 to 8 layer coils is the same as that required for 1 to 4 The patterns of the layers corresponding to the process are almost identical, and it can be used for the 5 to 8 layer coil process only by rotating the 1 to 4 layer mask 90 degrees clockwise. Therefore, when designing the mask, the mask patterns corresponding to each structure are arran...

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Abstract

The invention belongs to the technical field of microelectronics, and particularly relates to an MEMS process-based high-Q value three-dimensional spiral structure inductor and a fabrication method thereof. The three-dimensional spiral structure integrated inductor comprises a silicon matrix, a substrate insulation layer, spiral coils and a spiral coil support object, wherein the substrate insulation layer is used for isolating inductance spiral coils from the silicon matrix, and the spiral coils form electrical connection by cylindrical metal in inter-coil insulation layers. A three-dimensional vertical integrated scheme is employed, the inductor and the silicon substrate are isolated by a basic insulation layer, and the substrate loss is reduced; a vertical spiral structure is supportedby an insulation material and is upwards and vertically integrated to form a multi-layer coil within relatively small area, and a miniature integrated inductor which is low in loss and small I stray parasitic capacitance, has high-Q value and mechanical stability and is simultaneously compatible with a package process is finally formed.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a high-Q value three-dimensional spiral structure inductor and a manufacturing method thereof. Background technique [0002] In the past 30 years, with the development of electronic communication technology and the increasing functions of handheld devices such as smart consumer electronics, inductors, as one of the key components, have been widely used in integrated circuits to play the role of matching network, filtering, energy storage, choke And so on. Due to the constraints of packaging cost, size and performance conditions, traditional discrete inductors can no longer meet the growing demand. The demand for inductors with low energy consumption, small size, low noise, and high frequency continues to increase. [0003] Integrated inductors are usually realized in the form of metal spirals. Different designs and improvements of integrated inductors can be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L49/02
CPCH01L28/10
Inventor 徐玲周盛锐卢基存杨颖琳史传进
Owner FUDAN UNIV
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