Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Diodes offering asymmetric stability during fluidic assembly

A diode and fluid technology, applied in the field of ensuring the deposition of components relative to the substrate, can solve the problem of the impact of profit, the impact of manufacturing output, and the impact of high cost

Active Publication Date: 2019-04-16
ELUX INC
View PDF13 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Anything less than 100% yield within a display is expensive in terms of impact on margins and impact on manufacturing yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diodes offering asymmetric stability during fluidic assembly
  • Diodes offering asymmetric stability during fluidic assembly
  • Diodes offering asymmetric stability during fluidic assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Embodiments relate to systems and methods for fluidic assembly, and more particularly to systems and methods for ensuring deposition of components relative to a substrate.

[0016] Various embodiments of the invention provide fluidic assembly systems comprising a substrate and a suspension. The substrate includes a plurality of wells, and the suspension includes a carrier liquid and a plurality of pillar-enhanced diodes, each pillar-enhanced diode including a pillar extending from a top surface of the diode structure. In some instances of the foregoing embodiments, the system further includes a suspension moving device operable to move the suspension over the substrate such that a portion of the plurality of pillar-enhancing diodes is deposited in a corresponding one of the plurality of wells.

[0017] In various instances of the foregoing embodiments, the diode structure of the pillar-enhanced diode includes: a top surface at least partially formed of a first conductiv...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in relation to a substrate.

Description

technical field [0001] Embodiments relate to systems and methods for fluidic assembly, and more particularly to systems and methods for ensuring deposition of components relative to a substrate. Background technique [0002] LED displays, LED display assemblies, and array LED devices include a large number of diodes formed or placed at defined locations on the surface of the display or device. Forming or placing such a large number of diodes often results in low yield or many defects, which reduces the yield of the display or device manufacturing process. Some approaches to improve throughput and yield include adding additional diodes per pixel to provide sufficient redundancy to ensure that at least a sufficient number of diodes per pixel are properly formed. This type of approach provides increased yield, but without adding a large number of redundant diodes per pixel, display yield is often still lower than desired. Anything less than 100 percent yield within a display ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/075H01L27/15H01L25/18
CPCH01L2224/95085H01L24/95H01L25/0753H01L33/0095H01L21/67333H01L2224/95136H01L2224/95123H01L24/97H01L33/20H01L33/38H01L33/44H01L2224/95001H01L2224/95101H01L25/18H01L27/156H01L29/0657H01L21/67121
Inventor 保罗·约翰·舒勒大卫·罗伯特·海涅马克·艾伯特·克劳德尔肖恩·马修·加纳战长青阿维纳什图卡拉姆·欣德健司亚历山大·佐佐木库尔特·迈克尔·乌尔默
Owner ELUX INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products