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Substrate to be photoetched, photoetching template, near-field scanning photoetching method and device

A near-field scanning and photolithography technology, which is applied in the field of semiconductor technology, can solve the problems of short effective working distance and achieve the effects of increasing effective working distance, extending focal depth and improving exposure quality

Active Publication Date: 2019-04-19
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

However, existing near-field scanning lithography methods have short effective working distances

Method used

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  • Substrate to be photoetched, photoetching template, near-field scanning photoetching method and device
  • Substrate to be photoetched, photoetching template, near-field scanning photoetching method and device
  • Substrate to be photoetched, photoetching template, near-field scanning photoetching method and device

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Embodiment Construction

[0044] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0045] The specific implementation principle of near-field scanning lithography is that a special polarized local light field is incident on the surface of an optical antenna (such as a ridge antenna or a butterfly antenna), and under the polarization of the local light field, charges are generated. Oscillation, thereby forming a localized light field radiation similar to electric dipoles. This outgoing localized light field is a localized field. The intrinsi...

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Abstract

The invention discloses a substrate to be photoetched, a photoetching template, a near-field scanning photoetching method and a near-field scanning photoetching device. A first hyperbolic dispersion material layer is arranged in the substrate to be photoetched, the first hyperbolic dispersion material layer is positioned between a first base and a photoresist, and can limit the emission of a locallight field by means of the photoresist layer; a second hyperbolic dispersion material layer is arranged in the photoetching template, the second hyperbolic dispersion material layer is positioned atthe incident side of the photoresist layer; and can limit the emission of the local light field before the local light field is incident into the photoresist layer. Therefore, by adopting the substrate to be photoetched and the photoetching template, the focal depth in near-field scanning photoetching can be prolonged, the exposure quality of the photoresist layer can be improved, and the effective working distance of near-field scanning photoetching can be greatly increased.

Description

technical field [0001] The present invention relates to the technical field of semiconductor technology, and more specifically, to a substrate to be lithography, a lithography template, a near-field scanning lithography method and device. Background technique [0002] Photolithography technology has always been the core key technology in the semiconductor field, and its quality directly affects the performance of the back-end process and devices. With the development of Moore's Law, the critical dimensions of devices are getting smaller and smaller, requiring more sophisticated lithography equipment to achieve graphic definition of smaller line widths. In order to obtain a finer line width, the lithography machine needs to pay a huge cost, further compress the wavelength of the light source, and further increase the numerical aperture of the device. Especially with the advent of extreme ultraviolet lithography machines, the price of a single unit has exceeded 110 million US...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/38G03F7/20
CPCG03F1/38G03F7/7015G03F7/70191
Inventor 王亮秦金罗慧雯
Owner UNIV OF SCI & TECH OF CHINA
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