Fast recovery chip fabrication method

A manufacturing method and chip technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of large forward voltage drop of fast recovery chips, achieve short reverse recovery time and reduce forward voltage drop Effect

Inactive Publication Date: 2019-04-26
CHANGZHOUSR SEA ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a fast recovery chip manufacturing method to solve the problem of large forward voltage drop of the fast recovery chip in the prior art

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Embodiment Construction

[0021] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The components of the embodiments of the invention generally ...

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Abstract

The invention provides a fast recovery chip fabrication method and relates to the technical field of chip fabrication. A fast recovery diffusion substrate is fabricated by depositing a platinum layerby magnetron sputtering and then diffusing and then is pre-cut according to a preset size to form trenches, wherein the preset size includes preset width and preset depth, then the trenches are etchedaccording to a preset time so as to form the etched trenches. The trenches divide the diffusion substrate into multiple mutually connected fast recovery chips, then the etched groove is cleaned and passivated for protection, ohmic contact is formed on the surface of each of the fast recovery chips by metallization, and finally cutting is executed according to the etched trenches to form a plurality of fast recovery chips. The fast recovery chip fabrication method has the advantages that the reverse recovery time of the cut fast recovery chip is short and relatively centrally, and the effect of reducing forward voltage drop can be achieved.

Description

technical field [0001] The invention relates to the technical field of chip fabrication, in particular to a fast recovery chip fabrication method. Background technique [0002] Fast recovery diode (FRD for short) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in electronic circuits such as switching power supplies, PWM pulse width modulators, and frequency converters. Freewheeling diodes or damping diodes are used. [0003] At present, the common problem of fast recovery chips produced by traditional technology in China is that the forward voltage drop is large, the power consumption of the diode after packaging is relatively large, and the diode is easily burned. The fast recovery diodes used in high-power circuits have particularly strict requirements on the forward voltage drop capability of the chips. [0004] In view of this, how to solve the above problems is the focus of attention of those skilled in t...

Claims

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Application Information

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IPC IPC(8): H01L21/329
CPCH01L29/6609
Inventor 黄小锋
Owner CHANGZHOUSR SEA ELECTRONICS
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