Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for fabricating semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as chip drift, poor bonding force, and limited contact area, so as to improve bonding force, avoid chip drift, and improve chip drift effect

Active Publication Date: 2019-04-26
NINGBO SEMICON INT CORP
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention proposes a semiconductor device manufacturing method, which improves the problems of limited contact area and poor bonding force due to the opening of the front pad of the chip when the chip is bonded face-down, so that the chip can be bonded to the chip easily. The bonding force of the junction film is significantly improved, which improves the problem of chip drift during subsequent plastic packaging

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for fabricating semiconductor device
  • Method for fabricating semiconductor device
  • Method for fabricating semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details.

[0038] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numerals designate like elements throughout.

[0039] It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to" or "coupled to" another element or layer, it can be directly on, on, or "coupled to"...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for fabricating a semiconductor device. The method comprises: providing a carrier wafer having a front and a back opposite to each other, forming a bonding layer on thefront of the carrier wafer, the bonding layer having a concave-convex surface matched with the front shape of a chip; attaching a chip bonding film to the front of the carrier wafer and the bonding layer; and attaching the chip to the chip bonding film; wherein the front of the chip is towards the front of the carrier wafer, and the front of the chip is closely attached to the chip bonding film.According to the method for fabricating a semiconductor device, the problems that when the chip is bonded with a surface downward, since a bonding pad on the surface of the chip is provided with a hole, the contact area is limited and a bonding force is poor are improved, the bonding force between the chip and the chip bonding film is obviously improved, and the problem of chip drift during subsequent plastic sealing is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] Fan-out (Fan-out) packaging is to embed a chip with good performance into a plastic packaging (molding) material or substrate, and realize the connection with other devices through metal connection methods such as RDL (rewiring layer). The fan-out packaging process effectively reduces the thickness and size of the package, is compatible with the packaging of various chips, has lower cost, and has higher device performance. It has become a hot spot in the current packaging process. [0003] In the fan-out packaging process, a very important process is the chip bonding process (ie DA, Dieattach), which is to quickly bond the chips one by one to the adhesive film (film). However, it is sometimes necessary to carry out the die bonding process in a face down (face down) form (i.e., the design surf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50
CPCH01L21/50
Inventor 刘孟彬石虎
Owner NINGBO SEMICON INT CORP