Unlock instant, AI-driven research and patent intelligence for your innovation.

Electron Beam Aperture Dynamic Adjustment Structure and Test Method of Electron Beam Scanning Machine

A technology of electron beam scanning and dynamic adjustment, which is applied in semiconductor/solid-state device testing/measurement, non-contact testing, single semiconductor device testing, etc. Resolution, scan quality optimal effect

Active Publication Date: 2021-06-15
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since they are all pre-set fixed apertures, and because the apertures of each component cannot be adjusted steplessly, it is very inconvenient in actual use. For example, 3 and 4 are two adjacent components, but it may happen that component 3 is used The hole diameter is too large, and the hole diameter of the No. 4 component is too small, and the best effect is often not achieved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electron Beam Aperture Dynamic Adjustment Structure and Test Method of Electron Beam Scanning Machine
  • Electron Beam Aperture Dynamic Adjustment Structure and Test Method of Electron Beam Scanning Machine
  • Electron Beam Aperture Dynamic Adjustment Structure and Test Method of Electron Beam Scanning Machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The electron beam aperture dynamic adjustment structure of the electron beam scanning machine according to the present invention scans the defects of the wafer. The electron beam aperture adjustment structure of the electron beam scanning machine includes a plurality of arc-shaped baffles. The above-mentioned multiple arc-shaped baffles form a circle, such as figure 1 As shown, the center forms an aperture for electron beams to pass through, and the plurality of arc-shaped baffles can be dynamically adjusted so that the size of the center aperture can be adjusted.

[0024] There are no less than four arc-shaped baffles, and the no less than four arc-shaped baffles form a circle to form a structure similar to the aperture of a camera lens, and a hole for electron beams to pass through is formed in the middle A hole whose aperture size affects the number of electron beams passing through it.

[0025] The not less than four arc-shaped baffles can each move inward or outwa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a structure for dynamically adjusting the electron beam aperture of an electron beam scanning machine, which scans the defects of the wafer. The aperture through which the electron beam passes, the aperture in the center can be adjusted steplessly in size. The test method for the dynamic adjustment structure of the electron beam aperture of the electron beam scanning machine, the machine has a built-in scanning program, and before the formal scanning, the best scanning conditions are found by pre-scanning a specific area of ​​the wafer, so as to achieve For the best scanning effect, a standard image data is formed, and its resolution is recorded; then the scanning program is started, the wafer is loaded into the machine and the pre-scanning program is run first, and the resolution is obtained in the preset area, and then compared with the resolution of the standard image data After comparison, when a certain deviation occurs, the machine automatically adjusts the aperture size of the electron beam until the resolution is close to that of the standard image data, realizing dynamic adjustment of the resolution.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a structure for dynamically adjusting the electron beam aperture of an electron beam scanning machine. [0002] The invention also relates to a test method for testing by using the electronic beam scanning machine platform electron beam aperture dynamic adjustment structure. Background technique [0003] With the development of integrated circuit technology and the scaling down of critical dimensions, the semiconductor technology has become more and more complex, and defect detection has become more and more difficult and complicated. In the prior art, when making defect samples, defect scanning machines are generally used to scan the wafer for defects to obtain scanning images of wafer defects. The scanning images of wafer defects can show the defects existing on the surface of the wafer and the shape of the surface of the wafer. Then load the wafer into the sa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01R31/265
Inventor 黄莉晶
Owner SHANGHAI HUALI MICROELECTRONICS CORP