3D memory device and method for fabricating same

A technology of memory device and manufacturing method, applied in the field of memory, can solve the problems of 3D memory device failure, attacking insulation layer, etc.

Active Publication Date: 2019-05-03
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the gate conductor, due to the incomplete filling between the channel holes, the gate conductor reactive gas residue (such as fluorine...

Method used

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  • 3D memory device and method for fabricating same
  • 3D memory device and method for fabricating same
  • 3D memory device and method for fabricating same

Examples

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Embodiment Construction

[0058] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0059] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0060] "Above" described in the present invention refers to being located above the plane of the substrate, which may refer to direct contact between materials, or may be arranged at intervals.

[0061] Figure 1a and1b A circuit diagram and a schematic structural diagram of a memory cell string of a 3D memory device are respectively shown. The memory cell string shown in this embodiment includes the case of 4 memory cells. It can be understood that the present invention is not limited thereto, ...

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Abstract

Disclosed is a 3D memory device comprising a substrate; a stacked structure on the substrate and including a plurality of conductor layers and a plurality of insulating layers alternately stacked; a plurality of memory strings extending through the stacked structure; a plurality of conductive channels extending through the stacked structure; wherein the plurality of memory strings are configured as a honeycomb structure; each of the conductive channels is located at the center of the honeycomb structure and is configured to supply power to a plurality of memory strings around the substrate through the substrate. The present invention also provides a method for fabricating a 3D memory device provided by the present invention. The method, by using a common-source hole as a deposition channel to replace a sacrificial layer in the stacked structure with a conductor layer and using the common-source hole to form a common-source conductive channel, avoids voids between the conductor layersand the common-source conductive channel in the gate stacked structure.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a 3D memory device and a manufacturing method thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Compared with...

Claims

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Application Information

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IPC IPC(8): H01L27/11524H01L27/11551H01L27/1157H01L27/11578
Inventor 刘藩东华文宇
Owner YANGTZE MEMORY TECH CO LTD
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