Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for improving control precision of monocrystalline silicon resistivity

A technology for controlling precision and resistivity, which is applied in the field of improving the control precision of monocrystalline silicon resistivity, which can solve problems such as large resistivity fluctuations, no resistivity control precision, and unstable product performance, so as to improve conversion efficiency and reduce resistance The effect of improving the defect rate and improving the qualified output

Inactive Publication Date: 2019-05-10
内蒙古中环晶体材料有限公司
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For monocrystalline silicon, resistivity is a very important parameter index. Too high or too low resistivity has a very obvious impact on the conversion efficiency of cells. Therefore, stable resistivity is more helpful to improve the conversion of cells. Efficiency, at present, the resistivity of the same position of the single crystal fluctuates greatly, the product performance is unstable, and there is no feasible means to improve the resistivity control accuracy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be further described below in conjunction with specific examples.

[0019] An embodiment of the present invention relates to a method for improving the control accuracy of resistivity of single crystal silicon, which is used in the process of Czochralski single crystal. In the process of Czochralski single crystal, the resistivity of recycled materials is refined and classified, and the The alloy sheet is refined and classified, and the materials used in the Czochralski single crystal process are refined, so as to improve the resistivity accuracy of single crystal silicon and improve product quality.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for improving the control precision of monocrystalline silicon resistivity. The method includes grading the resistivity of recycled materials; determining the fluctuation range of alloy sheet parameters; calculating the resistivity of residual materials; and configuring alloy to control the target resistivity accuracy. The method has the advantages of improving resistivity control precision, improving product quality, meeting customer requirements, improving client battery conversion efficiency, reducing resistivity defect rate and improving qualified output atthe same time.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon production, and in particular relates to a method for improving the control precision of monocrystalline silicon resistivity. Background technique [0002] With the rapid development of the photovoltaic industry, the parameters of monocrystalline silicon wafer cells are constantly improving, and the requirements for raw material parameters are also getting higher and higher. For monocrystalline silicon, resistivity is a very important parameter index. Too high or too low resistivity has a very obvious impact on the conversion efficiency of cells. Therefore, stable resistivity is more helpful to improve the conversion of cells. Efficiency. At present, the resistivity of the same position of the single crystal fluctuates greatly, and the product performance is unstable. There is no feasible means to improve the resistivity control accuracy. Contents of the invention [0003] In vi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 高鹏王建平郝勇赵存凤郭志荣武皓洋王林徐强谷守伟
Owner 内蒙古中环晶体材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com