Method for improving control precision of monocrystalline silicon resistivity
A technology for controlling precision and resistivity, which is applied in the field of improving the control precision of monocrystalline silicon resistivity, which can solve problems such as large resistivity fluctuations, no resistivity control precision, and unstable product performance, so as to improve conversion efficiency and reduce resistance The effect of improving the defect rate and improving the qualified output
Inactive Publication Date: 2019-05-10
内蒙古中环晶体材料有限公司
View PDF7 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
For monocrystalline silicon, resistivity is a very important parameter index. Too high or too low resistivity has a very obvious impact on the conversion efficiency of cells. Therefore, stable resistivity is more helpful to improve the conversion of cells. Efficiency, at present, the resistivity of the same position of the single crystal fluctuates greatly, the product performance is unstable, and there is no feasible means to improve the resistivity control accuracy
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreExamples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0018] The present invention will be further described below in conjunction with specific examples.
[0019] An embodiment of the present invention relates to a method for improving the control accuracy of resistivity of single crystal silicon, which is used in the process of Czochralski single crystal. In the process of Czochralski single crystal, the resistivity of recycled materials is refined and classified, and the The alloy sheet is refined and classified, and the materials used in the Czochralski single crystal process are refined, so as to improve the resistivity accuracy of single crystal silicon and improve product quality.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a method for improving the control precision of monocrystalline silicon resistivity. The method includes grading the resistivity of recycled materials; determining the fluctuation range of alloy sheet parameters; calculating the resistivity of residual materials; and configuring alloy to control the target resistivity accuracy. The method has the advantages of improving resistivity control precision, improving product quality, meeting customer requirements, improving client battery conversion efficiency, reducing resistivity defect rate and improving qualified output atthe same time.
Description
technical field [0001] The invention belongs to the technical field of monocrystalline silicon production, and in particular relates to a method for improving the control precision of monocrystalline silicon resistivity. Background technique [0002] With the rapid development of the photovoltaic industry, the parameters of monocrystalline silicon wafer cells are constantly improving, and the requirements for raw material parameters are also getting higher and higher. For monocrystalline silicon, resistivity is a very important parameter index. Too high or too low resistivity has a very obvious impact on the conversion efficiency of cells. Therefore, stable resistivity is more helpful to improve the conversion of cells. Efficiency. At present, the resistivity of the same position of the single crystal fluctuates greatly, and the product performance is unstable. There is no feasible means to improve the resistivity control accuracy. Contents of the invention [0003] In vi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 高鹏王建平郝勇赵存凤郭志荣武皓洋王林徐强谷守伟
Owner 内蒙古中环晶体材料有限公司
PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.
